2019
DOI: 10.3389/fmats.2019.00319
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The Influence of Microstructure on Nanomechanical and Diffusion Barrier Properties of Thin PECVD SiOx Films Deposited on Parylene C Substrates

Abstract: Plasma-enhanced chemical vapor deposition (PECVD) was used to deposit SiO x thin films of varying thicknesses on parylene C substrates, using hexamethyldisiloxane (HMDSO) as a precursor. The microstructure of SiO x coatings was analyzed using X-ray photoemission spectroscopy (XPS), nanoindentation, and spectroscopic ellipsometry. The composition ranged from oxygen-rich oxides with large silanol OH content to hybrid oxides with larger organic content, while refractive index varied from 1.45 to 1.5 depending on … Show more

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Cited by 9 publications
(5 citation statements)
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“…The biggest problem with the microstructure defects of the inorganic thin-film capsulation layer is the high porosity at a low temperature. Due to the porous structu the high-porosity films, water vapor can penetrate the nano-scale channels [24][25][26][27] surface and the cross-section of the film were observed through SEM. As shown in F The biggest problem with the microstructure defects of the inorganic thin-film encapsulation layer is the high porosity at a low temperature.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The biggest problem with the microstructure defects of the inorganic thin-film capsulation layer is the high porosity at a low temperature. Due to the porous structu the high-porosity films, water vapor can penetrate the nano-scale channels [24][25][26][27] surface and the cross-section of the film were observed through SEM. As shown in F The biggest problem with the microstructure defects of the inorganic thin-film encapsulation layer is the high porosity at a low temperature.…”
Section: Resultsmentioning
confidence: 99%
“…As shown in F The biggest problem with the microstructure defects of the inorganic thin-film encapsulation layer is the high porosity at a low temperature. Due to the porous structure of the high-porosity films, water vapor can penetrate the nano-scale channels [24][25][26][27]. The surface and the cross-section of the film were observed through SEM.…”
Section: Resultsmentioning
confidence: 99%
“…[73,365,366] Hence, (electro-)fragmentation tests associated with residual stress analyses and nanoindentation tests [106] are usually performed to determine the critical strain for failure, the internal stress components, the Young's modulus of the nanosized films, and derive the toughness properties of the film and interfaces. [82,[367][368][369][370][371] (Figure 8D(i)). On the other hand, fatigue tests with cyclic bending/tensile loads applied with properly customized setups are performed to determine the barrier properties in a dynamic mode [106,372,373] (Figure 8D(ii)).…”
Section: Indirect Electromechanical Methodsmentioning
confidence: 99%
“…For example, Taylor et al performed large area fabrication of boron doped nano-crystalline diamond films with metallic type conduction using PECVD (figure 7(a)) [30]. Additionally, the PECVD technique has been widely used to fabricate other inorganic thin films like silicon nitride thin films [31], and silicon oxide thin films [32]; organic polymeric thin films like cyclohexene thin films [33], and methylcyclohexane thin films [34]; and even hybrid organicinorganic thin films [35].…”
Section: Vapour-phasementioning
confidence: 99%