We use positron annihilation to study vacancy defects in GaAs grown at low temperatures ͑LT-GaAs͒. The vacancies in as-grown LT-GaAs can be identified to be Ga monovacancies, V Ga , according to their positron lifetime and annihilation momentum distribution. The charge state of the vacancies is neutral. This is ascribed to the presence of positively charged As Ga ϩ antisite defects in vicinity to the vacancies. Theoretical calculations of the annihilation parameters show that this assignment is consistent with the data. The density of V Ga is related to the growth stoichiometry in LT-GaAs, i.e., it increases with the As/Ga beam equivalent pressure ͑BEP͒ and saturates at 2ϫ10 18 cm Ϫ3 for a BEPу20 and a low growth temperature of 200°C. Annealing at 600°C removes V Ga . Instead, larger vacancy agglomerates with a size of approximately four vacancies are found. It will be shown that these vacancy clusters are associated with the As precipitates formed during annealing.