Lead titanate thin films with high and stable ferroelectric properties were obtained by plasma-enhanced magnetron sputtering of pure metals. Effects of crystallites orientation, a substrate and grain boundaries on macroscopic ferroelectric properties of thin films were discussed. It was shown, that strong mechanical stresses, related to different thermal expansion of the film and the substrate materials, render determining influence on crystallites orientation in the film and lead to formation of mechanically clamped nonferroelectric layers in the vicinity of interfaces. The use of Al 2 O 3 as substrate material enables the formation of higher quality PbTiO 3 films, as compared to the films on the traditional silicon substrates.1 Introduction It is well known that phase composition and crystallinity essentially determine an existence of domains and ferroelectric properties of thin ferroelectric films [1,2]. Thin ferroelectric films on the basis of lead titanate are intensively studied due to their potential application in microelectronic [1,3]. However, for production and successful application of functional devices compatibility with the existing manufacturing technologies and desired, stable properties of such films are the necessary requirements. Within the framework of this task we discuss a problem of optimization of synthesis technology and investigate microstructure and ferroelectric properties of thin lead titanate films depending on the production conditions, such as lead and titanium Pb/Ti ratio in the initial components and the annealing mode of sputtered structures. Moreover, determination of the interrelation between structure and ferroelectric properties of the synthesized films made attempted.