The influence of ohmic back contacts on the properties of a-Si:H Schottky diodes

Ay, İlknur; Tolunay, Hüseyin

doi:10.1016/j.sse.2006.12.001

Cited by 22 publications

(5 citation statements)

References 9 publications

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“…Several reported that if n varies between 1 and 2, the tunneling current mechanism is dominant, if n=2, the generation recombination current mechanism is dominant and if n>2, the leakage current mechanism is dominant [35]. The values of n and I s are found to be ( [37].The barrier height  b can be calculated from the following relation:…”

Section: Electrical Propertiesmentioning

confidence: 99%

Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

Chebil

Fouzri

Fargi

et al. 2015

Materials Research Bulletin

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Section: Electrical Propertiesmentioning

confidence: 99%

Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

Chebil

Fouzri

Fargi

et al. 2015

Materials Research Bulletin

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“…At 2 V forward bias, this nc-Si:H p-n junction diode shows a current density of 10 A/cm 2 versus approximately 7*10 -5 A/cm 2 for an a-Si:H Schottky diode reported in [5]. At 2 V forward bias, this nc-Si:H p-n junction diode shows a current density of 10 A/cm 2 versus approximately 7*10 -5 A/cm 2 for an a-Si:H Schottky diode reported in [5].…”

Section: Discussionmentioning

confidence: 80%

“…Electrical current for a Schottky diode can be attributed to one of four different sources: thermionic emission (TE), tunneling, generation-recombination and leakage [5]. Electrical current for a Schottky diode can be attributed to one of four different sources: thermionic emission (TE), tunneling, generation-recombination and leakage [5].…”

Section: Diode Behavior and Characteristicsmentioning

confidence: 99%

Nanocrystalline Silicon Diodes for Rectifiers on Flexible RFID Tags

2008

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There has been an on-going effort to produce low cost radio frequency identification (RFID) tags as a replacement for traditional barcodes. One method to achieve low cost production is to integrate the manufacturing of the substrate, antenna and active devices into one single continuous process. Hydrogenated nanocrystalline silicon (nc-Si:H) is a suitable material for manufacturing the active devices in such a process.We present a nc-Si:H diode suitable for use in rectifiers on RFID tags. It consists of a Cr bottom contact, an undoped layer of nc-Si:H, an n-doped nc-Si:H and an Al top contact. We demonstrate the current-voltage characteristics of the nc-Si:H diode are much improved over a-Si:H diodes. Current density of 10 A/cm 2 and ON/OFF ratio greater than 10 6 was measured at 2 V forward bias. Output DC voltage of 2.6 V was achieved using four nc-Si:H diodes in a fullwave bridge rectifier. The input AC signal was a sine wave at 14 MHz and 2 V RMS amplitude.

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“…The behaviors of CdS/AIS PN-junctions looked like a schottky junction with rectification characteristics. Generally, when metal and semiconductor come into contact, schottky junction would be formed [27,28]. So I-V behaviors of CdS/AIS PN-junctions didnot come from schottky contact.…”

Section: Optical Property Of Au Nanoparticlesmentioning

confidence: 99%

The study of optical and electrical properties of AgInS₂-based composite

Wen,

Zhang,

et al. 2024

Phys. Scr.

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Photovoltaic solar energy was one of the few sustainable and pollution-free energy sources. AgInS2 was a promising photovoltaic material, which had attracted considerable in long time due to its outstanding photovoltaic performance. Furthermore, the nanoparticles could improve the light absorption efficiency of absorption layer to enhance the photoelectric conversion efficiency of solar cell. In this paper, the suitable preparation methods of AgInS2 film and gold nanoparticles were used to improve the optical-electric performances of AgInS2-based solar cell. AgInS2 films were prepared by vacuum evaporation using different raw materials (Ag+In+S and Ag2S+In2S3) and then annealed at 400 °C or 425 °C. From absorption spectrum, the AgInS2 film, which was prepared by two components (Ag2S+In2S3) and annealed at 400 °C, had the highest absorption. And the transmission spectrum of the AgInS2 film was similar to that obtained from finite difference time domain simulation. Furthermore, this AgInS2 film was used to prepare AgInS2/CdS PN junction and AgInS2/gold/CdS PN junction. Due to the introduction of gold nanoparticles, the forward current of the AgInS2/gold/CdS PN junction increased an order of magnitude, but ideal factor and barrier height decreased, which meant that gold nanoparticles can promote carrier transport and improve electric property. As a result, this AgInS2/gold/CdS PN junction owned high absorption efficiency, low reverse saturation current and large barrier height, which meant huge application potential in solar cells field.

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The influence of ohmic back contacts on the properties of a-Si:H Schottky diodes

Cited by 22 publications

References 9 publications

Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

Nanocrystalline Silicon Diodes for Rectifiers on Flexible RFID Tags

The study of optical and electrical properties of AgInS₂-based composite

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The influence of ohmic back contacts on the properties of a-Si:H Schottky diodes

Cited by 22 publications

References 9 publications

Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

Nanocrystalline Silicon Diodes for Rectifiers on Flexible RFID Tags

The study of optical and electrical properties of AgInS2-based composite

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Product

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The study of optical and electrical properties of AgInS₂-based composite