The influence of p-doping on the temperature sensitivity of 1.3 /spl mu/m quantum dot lasers

Massé, N. F.; Marko, Igor P.; Sweeney, S. J.; Adams, A.R.; Hatori, Nobuaki; Sugarawa, M.

doi:10.1109/leos.2005.1548150

Cited by 2 publications

(3 citation statements)

References 2 publications

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“…1, introducing p-doping in QD active regions can lower the J th above the room temperature, which is mainly due to the fact that the p-doping increases the occupying probability of holes in the ground sate of the valence band, as reported in [13]. However, some experimental data have so far shown the opposite [14]. The reason may be that the p-type doping induced unnecessary impurities that dissipate the injected current.…”

Section: Contributedmentioning

confidence: 99%

Theoretical analysis of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot lasers

Yang

Cao

et al. 2009

Phys. Status Solidi (c)

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A theoretical study of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot (QD) lasers is presented. The expression of modal gain is derived, which includes an effective ratio that describes how many QDs contribute to the modal gain. The calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. The calculated maximum modal gain is in a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributedmentioning

confidence: 99%

Theoretical analysis of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot lasers

Yang

Cao

et al. 2009

Phys. Status Solidi (c)

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“…© 2008 American Institute of Physics. ͓DOI: 10.1063/1.2975961͔There is considerable interest in the application of p-type modulation doping to semiconductor quantum dots ͑QDs͒, mainly with the aim of obtaining the predicted temperature independent operation of a QD laser.1,2 Reports of carrier processes in these systems [3][4][5][6] include studies of carrier relaxation mechanisms 7-10 and carrier recombination dynamics. …”

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confidence: 99%

“…1,2 Reports of carrier processes in these systems [3][4][5][6] include studies of carrier relaxation mechanisms 7-10 and carrier recombination dynamics.…”

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confidence: 99%

Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots

Jang

Badcock

Mowbray

et al. 2008

Applied Physics Letters

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The photoluminescence efficiency and carrier recombination time of p-type modulation doped InAs/GaAs quantum dots ͑QDs͒ have been measured as a function of doping density. At 10 K the carrier lifetime decreases from 1200 to 350 ps over the doping range of 0 and 30 acceptors/QD. This behavior is attributed to an enhancement of the Auger-type recombination due to the presence of extrinsic holes in the QDs. The hole density dependence of the Auger process is found to be weaker than in bulk semiconductors and quantum wells ͑QWs͒. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2975961͔There is considerable interest in the application of p-type modulation doping to semiconductor quantum dots ͑QDs͒, mainly with the aim of obtaining the predicted temperature independent operation of a QD laser.1,2 Reports of carrier processes in these systems [3][4][5][6] include studies of carrier relaxation mechanisms 7-10 and carrier recombination dynamics. 7In the latter a reduced photoluminescence ͑PL͒ decay time for a highly doped structure was attributed to increased nonradiative recombination at centers introduced by the doping. 7However in this work only one doping level was studied at a level significantly above that typically used in laser devices. In this letter, we report a study of the low temperature carrier lifetime in p-type modulation doped 1.3 m emitting InAs/GaAs QDs, with doping densities varying from 0 to 30 acceptors/QD. Both the carrier lifetime and the PL intensity decrease with increasing doping. These trends are explained by increasing Auger recombination, although this increase is weaker than in higher dimensional systems.Self-assembled InAs QDs were grown by molecular beam epitaxy on GaAs substrates. The QDs were grown within 8 nm In 0.15 Ga 0.85 As-GaAs quantum wells ͑QWs͒ to give a dot-in-a-well ͑DWELL͒ structure.11,12 Five samples with undoped QDs ͑QDU͒ and 6 ͑QDH6͒, 12 ͑QDH12͒, 18 ͑QDH18͒, and 30 ͑QDH30͒ acceptors/QD were studied. QDU and QDH30 have six QD layers; the other samples have seven layers. The thicknesses of the GaAs spacer layer between the DWELLs were 45 nm for QDU and QDH30 and 50 nm for the other structures. Within the spacer layers 6-nm-thick Be doped regions were placed 9 nm below each DWELL.The 10 K PL emission wavelengths are 1211, 1190, 1193, 1191, and 1209 nm for samples QDU, QDH6, QDH12, QDH18, and QDH30, respectively. These very similar wavelengths indicate that the physical structure of the QDs is not significantly affected by the doping. The room temperature emission of all samples is close to 1.3 m, with a strong integrated PL intensity, decreasing by no more than 75% compared to the respective low temperature value, confirming a high structural quality.Time-resolved PL ͑TR-PL͒ was performed at 10 K using a mode-locked Ti:sapphire laser with a repetition rate of 76 MHz and a pulse width of ϳ180 fs. The excitation wavelength was 740 nm, which excites carriers above the GaAs band edge. Transient PL signals were detected for a 10 nm band centered at the peak of the ground st...

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The influence of p-doping on the temperature sensitivity of 1.3 /spl mu/m quantum dot lasers

Cited by 2 publications

References 2 publications

Theoretical analysis of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot lasers

Theoretical analysis of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot lasers

Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots

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