The influence of porous silicon coating on silicon solar cells with different emitter thicknesses

Vitanov, P.; Delibasheva, M; Goranova, E.; Peneva, M

doi:10.1016/s0927-0248(99)00110-5

Cited by 27 publications

(7 citation statements)

References 8 publications

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“…The thin layers are of nanoporous structure and contain columnar pores perpendicular to the samples surface. The formed layers have a thickness of ≤100 nm, which is the most suitable for photovoltaic applications [29].…”

Section: Methodsmentioning

confidence: 99%

Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

Badawy

2008

Journal of Alloys and Compounds

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Section: Methodsmentioning

confidence: 99%

Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

Badawy

2008

Journal of Alloys and Compounds

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“…The European Physical Journal Applied Physics of PS to about ≈ 100 nm. A range in thickness has the advantage of having a PS layer whose resistance is lower for the contribution to the series resistance of the solar cell [19,20].…”

Section: -P1mentioning

confidence: 99%

Influence of etching parameters on optoelectronic properties of c-Si/porous silicon heterojunction – application to solar cells

Bechiri

Zerdali

Rahmoun

et al. 2013

Eur. Phys. J. Appl. Phys.

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Thin layers of nanoporous silicon PS were synthesized by anodic etching, in order to develop photovoltaic cells. We proposed a diluted concentration of hydrofluoric acid with different etching current densities (1, 3, 5 mA/cm 2) on a fairly short time anodization. Observations by scanning electron microscope, electrical measurements and optical measurements revealed that the structural properties of PS layers depended on strong conditions of prints. The reverse and forward component of the I-V characteristics showed an appropriate method to explore and extract the parameters of the diode ideality factor n. The optimum conditions of formation of PS were: HF concentration of 1% and an etching current density of 1 mA/cm 2. Unlike silicon, which has a low absorption of short visible wavelengths, it was shown that the PS had wide energy gap of ≈ 2 eV, and a marked improvement in the absorption between 400 and 600 nm. This property has been used to optimize the response of the solar cell Ni/PS/c-Si. Efficiency performance close to 4.2% was obtained with a V oc of 400 mV, and fill factor of 46%. The solar cell exhibited better response than the reference cell Ni/c-Si. These results show that PS/c-Si heterojunction has a potential for photovoltaic applications.

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“…Canham was the first to note apparent photoluminescence (PL) at room temperature, [2] indicating that the bandgap broadening of PS compared to bulk silicon and formation of a heterojunction between PS and silicon substrate according to quantum confinement model, photoconductivity (PC) and photovoltaic (PV) properties of this material were reported [3][4][5]. Besides these properties, the low reflection losses and large active area for light-semiconductor interaction as results of its porous nature, absorption spectrum in the range 0.8-1.3 eV and Hpassivated surface make PL a promising material for use in silicon solar cell technology [6][7][8]. In the last decades, several authors have reviewed PS application in mono and multi-crystalline silicon solar cells as an antireflection coating or a window layer in heterojunction cell structure [6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…Besides these properties, the low reflection losses and large active area for light-semiconductor interaction as results of its porous nature, absorption spectrum in the range 0.8-1.3 eV and Hpassivated surface make PL a promising material for use in silicon solar cell technology [6][7][8]. In the last decades, several authors have reviewed PS application in mono and multi-crystalline silicon solar cells as an antireflection coating or a window layer in heterojunction cell structure [6][7][8][9][10][11][12]. This paper focuses on the fabrication of multilayers which consist of the first base porous silicon structure and application of such structure in Si photovoltaic devices.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of FTO/Li2O/ZnO/p-PSi/Al solar cell by chemical precipitation method

Hussan¹,

Bakr²,

N.³

et al. 2021

JOR

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In this paper, electrochemical etching of the p-type silicon wafer is used to prepare p-type porous silicon with a current density of 10 mA.cm-2 for 10 minutes. Zinc oxide and lithium oxide nanoparticles are prepared separately by chemical precipitation method and simple precipitation method respectively and deposited on glass substrates by drop-casting method. Moreover, the structural and optical properties of the films were analyzed by using XRD and UV-Vis. The XRD results showed that the ZnO and Li2O films are polycrystalline with hexagonal wurtzite structure and cubic structure, and preferred orientation along (101) and (003) planes, respectively. Using Scherrer's formula, the crystallite size was measured and it was found that ZnO and Li2O thin films have a crystallite size of 22.04 and 45.6 nm respectively. The atomic force microscope image and the distribution chart of the grains of the ZnO and Li2O films displayed the grain sizes of~ 58.45 and 83.19 nm. The absorption coefficient spectrum of films were recorded by Ultra Violet–Visible spectrophotometer. The energy band gaps of the films calculated by Tauc’s formula were ~ 4.18 and 5.5 eV. The results demonstrated that the conversion efficiency for Al/Li2O/ZnO/p-PSi/Al, Al/Li2O/ZnO/FTO and FTO/Li2O/ZnO/p-PSi/Al tandem (porous silicon/FTO) solar cells were 0.313%, 0.764% and 24.6%.

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The influence of porous silicon coating on silicon solar cells with different emitter thicknesses

Cited by 27 publications

References 8 publications

Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

Influence of etching parameters on optoelectronic properties of c-Si/porous silicon heterojunction – application to solar cells

Fabrication of FTO/Li2O/ZnO/p-PSi/Al solar cell by chemical precipitation method

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