The influence of pre-heating temperature on the CIGS thin film growth and device performance prepared in cracked-Se atmosphere

Li, Guangmin; Liu, Wei; Liu, Yiming; Lin, Shuping; Li, Xiaodong; Zhou, Zhiqiang; He, Qiang; Sun, Yun

doi:10.1088/0268-1242/30/10/105012

Cited by 8 publications

(4 citation statements)

References 29 publications

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“…To date, the commercialized solar cells are based on bulk materials of monocrystalline Si and polycrystalline Si, as well as thin films of CdTe, Cu(In,Ga)Se 2 , and tandem amorphous‐Si/microcrystalline‐Si . These first and second generation photovoltaic devices possess excellent photoelectron efficiency and long‐term stability; however, their disadvantages arise from either the toxicity of cadmium metal or the low abundance of indium metal, as well as complex manufacturing protocols .…”

Section: Photovoltaic Device and Solar Cellsmentioning

confidence: 99%

Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices

Pang

Bachmatiuk

Yin

et al. 2017

Advanced Energy Materials

448

253

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Black phosphorus was first synthesized by Bridgman in 1914 [1] but has been less intensively studied in the past century due The successful isolation of phosphorene (atomic layer thick black phosphorus) in 2014 has currently aroused the interest of 2D material researchers. In this review, first, the fundamentals of phosphorus allotropes, phosphorene, and black phosphorus, are briefly introduced, along with their structures, properties, and synthesis methods. Second, the readers are presented with an overview of their energy applications. Particularly in electrochemical energy storage, the large interlayer spacing (0.53 nm) in phosphorene allows the intercalation/deintercalation of larger ions as compared to its graphene counterpart. Therefore, phosphorene may possess greater potential for high electrochemical performance. In addition, the status of lithium ion batteries as well as secondary sodium ion batteries is reviewed. Next, each application for energy generation, conversion, and storage is described in detail with milestones as well as the challenges. These emerging applications include supercapacitors, photovoltaic devices, water splitting, photocatalytic hydrogenation, oxygen evolution, and thermoelectric generators. Finally the fast-growing dynamic field of phosphorene research is summarized and perspectives on future possibilities are presented calling on the efforts of chemists, physicists, and material scientists

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Section: Photovoltaic Device and Solar Cellsmentioning

confidence: 99%

Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices

Pang

Bachmatiuk

Yin

et al. 2017

Advanced Energy Materials

448

253

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“…Therefore, a range of processes have been assessed. Table presents representative cases where the small area solar cell efficiency is 10% or more . On the other hand, because Se vapor has different characteristics from general gas, several problems can be encountered when it is supplied in the vapor state when attempting to obtain a uniform heat treatment result.…”

Section: Introductionmentioning

confidence: 99%

“…The thermal energy and chemical activity of selenium clusters (Se n , n > 5) with larger molecules are relatively low, which leads to CIGS films with poor crystal quality. Therefore, cracked selenium (Se n , n < 5) may exhibit higher chemical activity, which is desirable in the CIGS fabrication process . Furthermore, when delivering vapor species with significantly different molecular weights, it is difficult to maintain uniform Se activity over a large area due to the significant difference in the mean velocity of the vapor molecules (v rms ∝ m −1/2 ).…”

Section: Introductionmentioning

confidence: 99%

Two‐step selenization using nozzle free Se shower for Cu(In,Ga)Se₂ thin film solar cell

Song

Kang

Baek

et al. 2017

Progress in Photovoltaics

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The production of commercialized Cu(In,Ga)(S,Se) 2 (CIGS) photovoltaic absorber layers uses expensive H 2 Se gas with a high utility cost. To reduce the manufacturing cost of CIGS photovoltaic modules, a process technology capable of supplying Se vapor uniformly over a large area is required to replace H 2 Se. In this study, a nozzle-free Se shower was implemented using a porous material to pass Se vapor while confining liquid Se, and the highly effective selenization of the CuInGa precursor was performed. The nozzle-free Se-shower vehicle could be mounted in a commercial rapid thermal process chamber. The chamber pressure and the temperatures of the shower module and substrate, which were controlled independently by the upper and lower heaters, respectively, were varied to control the amount of Se supplied during the entire selenization reaction in real time. In particular, the precursor should be soaked with a sufficient amount of Se at a relatively low substrate temperature of 300°C or less to obtain a good quality absorber. In addition, at a chamber pressure of 100 Torr during the soaking stage, the Ga content in the surface region of the absorber increased considerably with a concomitant improvement in the open-circuit voltage. The highest performance obtained using this method was an open-circuit voltage of 0.638 V, short-circuit current density of 34 mA/cm 2 , fill factor of 67.2%, and an active area efficiency of 14.57%. This performance is very high compared with other CIGS solar cells manufactured by a 2-step process using Se vapor.

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“…After the indium gallium selenide is completely consumed by the supplied copper and selenium, the copper selenide (β-Cu 2−x Se) and liquid phases are then formed toward the end of the second stage. It has been reported that the grain growth was enhanced by liquid-phase mediation during the second stage and third stage process [38][39][40]. The varying Se rates were intended to affect the liquid amounts for the transition from the second stage to the third stage.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of CIGS photovoltaic devices co-evaporated with various Se flux rates at low temperatures

Huang

Lin

Jan

2016

Semicond. Sci. Technol.

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Cu(In,Ga)Se 2 (CIGS) films were prepared by a single-stage co-evaporation process at Se flux rates of 10 Å s −1 , 20 Å s −1 , and 30 Å s −1 and substrate temperatures ranging from 400 °C to 500 °C. The flux rates of the Cu, In, Ga, and Se were kept constant throughout each deposition of the films. The grain sizes, surface morphologies, and crystallinity of the CIGS films improved with increasing substrate temperatures or Se flux rates. The causes of the formation of voids on the surface of CIGS films deposited with a low Se flux rate of 10 Å s −1 at substrate temperatures of 475 °C and 500 °C were addressed. The higher Se flux rates of 20 Å s −1 and 30 Å s −1 repressed the formation of voids for the CIGS films deposited at the relatively higher substrate temperatures of 475 °C and 500 °C. The conversion efficiencies of CIGS solar cells were significantly improved by increasing the substrate temperatures or the Se flux rates, largely contributed from the enhancement of the open-circuit voltage and fill factor because of the restraint of the carrier recombination. The short-circuit current densities were slightly enhanced by the increment of the substrate temperatures or the Se flux rates, resulting from the improved crystalline quality of the CIGS films. Moreover, the EQE results suggest that the effective carrier-diffusion lengths of the films deposited at the relatively high substrate temperatures were increased, leading to the enhancement of the short-circuit current density. The efficiencies of CIGS solar cells prepared with a Se flux rate of 10 Å s −1 improved from 10% to 12.4% when the substrate temperatures increased from 400 °C to 500 °C. The efficiencies of cells deposited at the substrate temperature of 500 °C improved to 15.4% as the Se flux rates increased from 10 Å s −1 to 30 Å s −1 .

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The influence of pre-heating temperature on the CIGS thin film growth and device performance prepared in cracked-Se atmosphere

Cited by 8 publications

References 29 publications

Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices

Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices

Two‐step selenization using nozzle free Se shower for Cu(In,Ga)Se₂ thin film solar cell

Characteristics of CIGS photovoltaic devices co-evaporated with various Se flux rates at low temperatures

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The influence of pre-heating temperature on the CIGS thin film growth and device performance prepared in cracked-Se atmosphere

Cited by 8 publications

References 29 publications

Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices

Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices

Two‐step selenization using nozzle free Se shower for Cu(In,Ga)Se2 thin film solar cell

Characteristics of CIGS photovoltaic devices co-evaporated with various Se flux rates at low temperatures

Contact Info

Product

Resources

About

Two‐step selenization using nozzle free Se shower for Cu(In,Ga)Se₂ thin film solar cell