The influence of resonator structure on the linewidth enhancement factor of semiconductor lasers

Olofsson, L.; Brown, Thomas G.

doi:10.1109/3.135297

Cited by 25 publications

(11 citation statements)

References 27 publications

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“…Here, the a-factor is assumed to be constant over the total laser length. If this is not valid, a has to be replaced by its effective value a,tf [9].…”

Section: Determination Of the Linewidth Enhancement Factor A And Tmentioning

confidence: 99%

Simultaneous measurement of the linewidth, linewidth enhancement factor α, and FM and AM response of a semiconductor laser

Kruger

Krüger

1995

J. Lightwave Technol.

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Using a commercially available computer controlled spectrum analyser with tracking generator, optical input section, and optical delay line it is possible to measure the linewidth, linewidth enhancement factor cy, and FM and AM response of a semiconductor laser in one process. The determination of the linewidth yields also information about the frequency noise density and the determination of cy delivers information about the nonlinear gain. Assuming an optical input power of 0 dBm, a laser linewidth < 50 MHz and a modulation response of the laser without cut-off, AM indices m > 0.01% and FM deviations of about > 10 MHz up to 20 GHz can be detected.

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“…Here, the a-factor is assumed to be constant over the total laser length. If this is not valid, a has to be replaced by its effective value a,tf [9].…”

Section: Determination Of the Linewidth Enhancement Factor A And Tmentioning

confidence: 99%

Simultaneous measurement of the linewidth, linewidth enhancement factor α, and FM and AM response of a semiconductor laser

Kruger

Krüger

1995

J. Lightwave Technol.

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“…We then carry out the time correlation of b l (t) with (6), (17), and (19) and obtain D bb as 2D bb = −4K l ω l Im[ r,a (ω l )]n sp,l…”

Section: Time Correlation Of Source Fluctuationmentioning

confidence: 99%

“…]/2; n sp,l is a factor relating spontaneous emissions to Im[ r,a (ω l )]; ΔE F is the quasi-Fermi-level separation in the gain material; and k B T is the thermal energy. From (17), the modal source fluctuation b l (t) can be regarded as a Langevin noise [12] b…”

Section: Time Correlation Of Source Fluctuationmentioning

confidence: 99%

Dressed Linewidth Enhancement Factors in Small Semiconductor Lasers

Chang

2015

IEEE J. Select. Topics Quantum Electron.

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We show that the linewidth of a semiconductor-based small laser, when operated above the threshold, might not directly reflect the permittivity variation induced by carriers in the gain material. In fact, the linewidth may be significantly dressed by responses of modal amplitudes to emitting sources if the small cavity is dispersive, lossy, leaky, spectrally-sharp in gain, but not necessarily intricately-structured. This dressing effect might reduce linewidth enhancements. Despite a large material linewidth enhancement factor, the source-amplitude response could still keep the enhancement effect mild.

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“…Considering the nonuniform distribution of the carrier density, the coupled mode equations for the TM mode of CC-DFB laser can be expressed as [4] where the coupling coefficient for the TM mode is a complex k n ( z ) + j k , ( z ) with both the index and gain coupling 0733-8724/96$05,00 0 1996 IEEE ICno and ICgo represent the initial index and gain coupling constants, respectively. AIC,(z) and AIC,(z) are those which depend on the carrier density [9], expressed as…”

Section: Theorymentioning

confidence: 99%

“…Another method is using an absorptive grating to obtain a periodic change in the net gain [8]. When the index coupling and gain coupling are properly chosen, a complex coupled (index coupling + gain coupling) DFB laser can also reduce the spectral width enhancement factor [9] and produce an enhancement of AM and FM modulation responses [lo]. The important feature of a complex coupled DFB (CC-DFB) laser is that its complex coupling coefficient varies as the carrier density changes.…”

Section: Introductionmentioning

confidence: 99%

Polarization optical bistability induced by TM mode injection to a DFB laser with complex coupled coefficient

Shi

1996

J. Lightwave Technol.

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A novel method is proposed to produce an optical bistability by using a dynamically stable complex coupled D$B (CC-DFB) laser with TM mode injection. In this paper polarization optical bistabilities are analyzed in detail using coupled mode equations and rate equations for the CC-DFB lasers considering the longitudinal hole burning and carrier dependent complex coupling coefficients. Several parameters reflecting the physical features of a complex coupled DFB laser are discussed. It is shown that for a CC-DFB laser the polarization bistability induced by the TM mode injection is much stronger for the antiphase of complex coupling than that for the in-phase. In addition, the influences of initial coupling condition for gain grating structure on the optical bistability are also investigated considering both cases of the antiphase and in-phase.

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The influence of resonator structure on the linewidth enhancement factor of semiconductor lasers

Cited by 25 publications

References 27 publications

Simultaneous measurement of the linewidth, linewidth enhancement factor α, and FM and AM response of a semiconductor laser

Simultaneous measurement of the linewidth, linewidth enhancement factor α, and FM and AM response of a semiconductor laser

Dressed Linewidth Enhancement Factors in Small Semiconductor Lasers

Polarization optical bistability induced by TM mode injection to a DFB laser with complex coupled coefficient

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