The influence of source molecule structure on the low temperature growth of nitrogen-doped graphene

Abstract

Doping of heteroatoms such as nitrogen into the lattice structure of graphene can tune and tailor the overall electronic properties. N-doped graphene, depending on the nitrogen bonding mode and/or bonding configuration, displays subtly altered properties in comparison to pristine graphene. However, there remains a disappointing shortage of reliable methods for introducing dopants in a controlled and reproducible manner, preventing a thorough understanding of the relationship between structure and properties. In this study we aimed to prepare graphenes with nitrogen atoms doped at a graphitic (quaternary) site by depositing a source molecule containing a graphitic nitrogen atom: 4,4,8,8,12,12-hexamethyl-8,12-dihydro-4H-benzo[9,1]quinolizino[3,4,5,6,7-defg]acridine or 4H-benzo[9,1]quinolizino[3,4,5,6,7-defg]acridine-4,8,12-trione, on a heated Pt(111) substrate. At 400 °C, graphene with nitrogen atoms exclusively doped at a graphitic site was synthesized from the former molecule, while not from the latter molecule at any temperature. The present result indicates that the rational design of a source molecule is quite important for controlling the nitrogen doped site in the graphene lattice.

Microscopy and Spectroscopy Techniques for Characterization of Polymeric Membranes

“…Some chemicals have the same functional group such as ketones and aldehydes in which they share the carbonyl (C=O) group. Raman spectroscopy can differentiate between ketones (RCOR') and aldehydes (RCHO) at the wavelength of 1659 and 1725 cm −1 , respectively [104,105]. Figure 24 demonstrates the peaks and wavelengths of different functional groups.…”

Effect of UV light-induced nitrogen doping on the field effect transistor characteristics of graphene

“…7,8 With regard to CACs, increased conductivity by electron doping as a result of N-doping is important rather than emergence of a band gap. Despite the many studies on the synthesis of N-doped graphene, [9][10][11][12][13][14][15][16][17] controlling the doping level is still a big challenge. One of the major reasons is the trade-off relationship between the degree of graphenization and the N-doping amount; the former requires a high growth temperature, while the latter decreases rapidly with temperature.…”

“…One of the major reasons is the trade-off relationship between the degree of graphenization and the N-doping amount; the former requires a high growth temperature, while the latter decreases rapidly with temperature. [13][14][15][16][17] To overcome such a dilemma, a N-doping method effective still at room temperature is required. In addition, a direct N-doping method to graphene that can control the doping level has been highly anticipated.…”

Growth of N-doped graphene from nitrogen containing aromatic compounds: the effect of precursors on the doped site

“…CVD synthesis of N-doped graphene have been performed mostly on transition metal substrates such as Ni, 25,26 Cu, [27][28][29][30][31][32][33][34] and Pt. [35][36][37] Especially, platinum is an outstanding substrate due to its chemical stability; platinum is not easily oxidized compared to other transition metals. Owing to such stability, graphene grows on Pt without help of other gases, which enables us to synthesize graphene from a single source molecule.…”

“…Owing to such stability, graphene grows on Pt without help of other gases, which enables us to synthesize graphene from a single source molecule. [35][36][37][38][39] Single-source CVD uses a molecule that could have suitable chemical composition and structure. The singlesource CVD has an advantage in observing the effect of source molecules directly.…”