The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method

Abstract

Abstract. For the first time, Cu-Al-O films were grown using the reactive ion beam sputtering at temperatures ranging from 80 to 380 °C in 50 °C increments. Correlations between the properties of as-grown films measured by X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy, Fourier transform infrared spectrometry and optical transmission measurements have been discussed. It was shown that the increase of substrate temperature caused formation of the CuAlO 2 phase. Additional optimization of technological parameters of growth and post-growth temperature annealing are necessary to obtain single-phase CuAlO 2 films.

Growth of CuAlO2 on SiO2 under a layer-by-layer approach conducted by digitally processed DC sputtering and its transistor characteristics

“…Liu et al 17) deposited CuAlO films using RF reactive magnetron sputtering, noting phase transitions at specific substrate temperatures and emphasizing the dependence of conduction on film crystallinity and phase purity. Ievtushenko et al 18) investigated the influence of substrate temperature on Cu-Al-O films deposited using reactive ion beam sputtering, revealing increased substrate temperature leading to CuAlO 2 phase formation. Tsuboi et al 19) successfully prepared CuAlO 2 films using a dc-reactive sputtering method with Ar-diluted oxygen gas, achieving stoichiometric CuAlO 2 films through post-annealing at temperatures exceeding 700 °C in a nitrogen atmosphere.…”