The Influence of Surface on Scattering of Carriers and Kinetic Effects  in n-PbTe Films

Ruvinskiǐ, M. A.; Kostyuk, O. B.; Dzundza, Bogdan; Makovyshyn, V. I.

doi:10.15330/pcss.17.4.520-526

Cited by 1 publication

(1 citation statement)

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“…Figure 11d shows that the Ni_200 thin film presented an improved impedance matching, which favored absorption as the dominating mechanism in microwave attenuation. Theoretical models show that the low thickness and the increased resistivity are responsible for the electron scattering at the film surface and the electron scattering at the grain boundaries of films (Ruvinskii et al 2016). However, in the case of thin films, due to the quantum processes of interaction of the incident electromagnetic wave with the electronic structure of the film material, the absorption of radiation is a direct consequence of the presence of defects and high resistivity.…”

Section: Em Characterizationmentioning

confidence: 99%

Electromagnetic Behavior of Cu and Ni Nanofilms in the X-band

Gonçalves

Anjos

Morgado

et al. 2023

J. Aerosp. Technol. Manag.

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Currently, the presence of spurious microwave radiation is increasing in the environment, which has caused concern due to possible health problems in living beings and electromagnetic interference in electronic systems. To control this problem, studies in the materials area are taking place, aiming to attenuate the spurious radiation and meet requirements of good performance in broadband, low cost and low weight. The present work aimed to study Cu and Ni nanometric films with thicknesses of 65 and 200 nm, deposited on polyethylene terephthalate substrate by magnetron sputtering. Scanning electron microscopy with a field emission gun (FEG-SEM) showed that the films produced have different morphological textures, due to the parameters used in the sputtering process and also the free energy of metals. Impedance spectroscopy measurements showed that the films have low conductivity values, due to the metallic oxides formed on the film surfaces, confirmed by X-ray diffraction, and also to the presence of defects. Electromagnetic characterization (8.2 -12.4 GHz) showed that the Cu and Ni thin films had low performance, except the Ni_200 nm film, which showed a total shielding efficiency of about 30% in broadband. This result is promising considering the nanometric thickness of the Ni film.

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Section: Em Characterizationmentioning

confidence: 99%