The Influence of Temperature and Electric Field on The Etch-Channel Density in Swept Cultured Quartz

Gualtieri, J.G.

doi:10.1109/freq.1985.200851

Cited by 28 publications

(8 citation statements)

References 10 publications

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“…Sweeping is one of the most popularly used techniques in recent years to enhance the performance of quartz resonators. Sweeping or solid-state electrolysis or electrodiffusion is generally performed under vacuum or air or hydrogen or other desired atmosphere [44][45][46]. During sweeping, the crystal is placed in an electric field and heated.…”

Section: Processing Of α-Quartz For High-frequency Devicesmentioning

confidence: 99%

Growth of Quartz Crystals

Byrappa

2010

Bulk Crystal Growth of Electronic, Optical &Amp; Optoelectronic Materials

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Section: Processing Of α-Quartz For High-frequency Devicesmentioning

confidence: 99%

Growth of Quartz Crystals

Byrappa

2010

Bulk Crystal Growth of Electronic, Optical &Amp; Optoelectronic Materials

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“…Sweeping under conditions that lead to the indiffusion of electrode metals into quartz has been reportedto be additionallyeffectivein reducing the density of etch channels [3].…”

Section: Modification Of Extended Defects a Dislocationsmentioning

confidence: 99%

“…Thefollowing,temperature-ramped [2][3][4], sweeping procedure is typical for large bars: the full DC voltage is applied at the beginning and is maintained throughoutthe run; the temperature is increased automatically 10 the maximum temperature at a rate of 20 O C h i ; the temperature is then held constant at the maximum (isothermal phase) until the current density drops to a near-constant level; the temperature is then decreayed automatically to room temperature at a rate 20 OC h i .…”

Section: Temderature-rameed Sweedinqmentioning

confidence: 99%

“…This would indicate that the formation of etch channels is not influenced greatly by the dislocation strain energy. The impurity-modificationsuggestion is more likely for the following reasons: sweeping removes alkali-metal ions and quartz is attacked by alkaline solutions, such as, NaOH and Na2Si03 [55]; and reductions in etch-channel densities have been found when dislocations were decorated with electrode-metal impurities [3,19].…”

Section: Modification Of Extended Defects a Dislocationsmentioning

confidence: 99%

“…The sweeping process also alters dislocations, greatly reducing the tendency for formation of etch channels (pipes) during etch-processing of resonator blanks. Besides the indiffusion of hydrogen, electrode-metal indiffusion may also assist in the reduction of etch channels [3]. However, aggregation of the electrode-0090-5607/89/0000-038 1 $ I .OO 0 1989 IEEE metal atoms contributes to the nucleation of other crystalline phases, with subsequent fracturing of the quartz [7].…”

Section: Introductionmentioning

confidence: 99%

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Sweeping quartz crystals

Gualtieri

Proceedings., IEEE Ultrasonics Symposium

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Sweeping is a purification process that removes certain impurities and thereby improves the radiation sensitivity of quartz crystals. It is an electric field driven, high-temperature, solid-state diffusion process. The major steps of a typical sweeping process consist of: applying electrodesto the Z-surfacesof a lumberedquartz bar; applying voltage to the electrodesto produce an electricfield of approximately 1 kV/cm; heating the bar slowly either in air, vacuum, or in hydrogen containing or inert atmospheres to about 5 0 0 ' C; monitoring the current through the bar (as sweepingprogresses,the current decreases); when the current decays to some near-constant value, cooling the bar slowly to room temperature,and removing the voltage.Alkali-metal impurities, such as Li+ and Na' , are charge compensators for trivalent aluminum impurities in quartz. When sweeping is performed in air or H2, the alkalis diffuseto the cathode and are replaced by the indiffusion of hydrogen at the anode. The alkali-metal impurities are subsequently removed by lapping the Zsurfaces. The sweeping process also modifiesdislocations, reducing the tendencyfor formation of etch channels.Recent advances have involved the use of impurity characterizations, such as: electron spin resonance (ESR); acoustic loss measurements;and infrared absorption spectroscopy (IR). Future directions for technology enhancementwill probably involve: developmentof methodsto control theelectrode-quartz-gasinterface; use of H+ ion implantation techniquqand UV-stimulatedsweeping.

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Synthetic quartz crystal — A review

Hervey

Foise

2001

Mining, Metallurgy & Exploration

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The Influence of Temperature and Electric Field on The Etch-Channel Density in Swept Cultured Quartz

Cited by 28 publications

References 10 publications

Growth of Quartz Crystals

Growth of Quartz Crystals

Sweeping quartz crystals

Synthetic quartz crystal — A review

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