2009
DOI: 10.1007/s10008-009-0952-9
|View full text |Cite
|
Sign up to set email alerts
|

The influence of the conditions of the anodic formation and the thickness of Ag(I) oxide nanofilm on its semiconductor properties

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
3
0

Year Published

2014
2014
2023
2023

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 7 publications
(4 citation statements)
references
References 26 publications
1
3
0
Order By: Relevance
“…Electrochemical measurements in suspensions yielded flat band potentials of −0.4 V and +0.3 V vs. NHE for TiO 2 and Ag 2 O, respectively. The value measured here for the flat band potential of Ag 2 O is also in reasonably good agreement with published values [42,43].…”
Section: Photocatalytic Performance Of the Materialssupporting
confidence: 91%
“…Electrochemical measurements in suspensions yielded flat band potentials of −0.4 V and +0.3 V vs. NHE for TiO 2 and Ag 2 O, respectively. The value measured here for the flat band potential of Ag 2 O is also in reasonably good agreement with published values [42,43].…”
Section: Photocatalytic Performance Of the Materialssupporting
confidence: 91%
“…It should also be noted that Ag 2 O does not generate appreciable photocurrent at a bias of 0.2 V unless a high potential is applied under light excitation to produce AgO. , For the dark current, it is well-known that silver particles are readily oxidized during anodic polarization. As shown in Figure , there are two main current peaks generally observed in the dark scanning voltammetry curve of Ag.…”
Section: Resultsmentioning
confidence: 99%
“…1 mC cm −2 , the dissolution contributes to the overall oxidation current by no more than 3% at 355-365 mV vs. Hg|HgO. For q ox lower than 1 mC cm −2 , this contribution was not quantified, but it is expected that at early stages of the oxidation process, when the surface is not completely passivated or the oxide layer is very thin, the dissolution plays a more important role [44]. Figure 2 shows examples of XPS spectra for Ag subjected to oxidation in 0.1 M KOH at 420 mVand recorded at various stages of the Ar + sputtering.…”
Section: Resultsmentioning
confidence: 99%
“…semiconducting properties of the electrochemically formed Ag 2 O [1,21,[41][42][43][44] although a p-type semiconductivity is also reported [21,45,46].…”
Section: Introductionmentioning
confidence: 99%