The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT

Niu, Di; Wang, Quan; Li, Wei; Chen, Changxi; Xu, Jin; Jiang, Lijuan; Chi, Feng; Xiao, Hongling; Wang, Qian; Xu, Xiangang; Wang, Xiaoliang

doi:10.3390/mi12020131

Cited by 3 publications

(1 citation statement)

References 30 publications

(40 reference statements)

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“…The threshold voltages (V th = −3.1 V for HEMT A and -2.55 V for HEMT B) are different because of the absence of GaN cap and F ion implantation during F-based gas etching. A greater number of F ions were implanted under the gate of HEMT B without the TiO 2 insertion layer, causing the 2DEG concentration to decrease, 37) thus resulting in a higher threshold voltage. This is the same result as previously reported, 3) which used F-based gas injection to achieve enhanced devices.…”

Section: Resultsmentioning

confidence: 99%

TiO₂ insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT

Qin¹,

Wang²,

Chen³

et al. 2022

Jpn. J. Appl. Phys.

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Γ-gate has been used to increase the breakdown voltage of radio frequency (RF) devices, and the damage caused by gate pin etching has been studied. In this study, a TiO2 layer, acting as a protective layer, was inserted between the AlGaN barrier layer and SiN passivation layer. The AlGaN/GaN high-electron-mobility transistor (HEMT) with TiO2 had no kink effect in its output characteristic, and at high gate voltages, it demonstrated a higher transconductance than the HEMT without TiO2. The HEMT without TiO2 exhibited a more prominent saturation tendency for drain current. Additionally, the C–V test data show that the trap state density of the AlGaN/GaN interface of an AlGaN/GaN HEMT with TiO2 decreased compared with a HEMT without TiO2. DC and C–V test results show that the TiO2 layer can effectively reduce the etching damage of the material under the gate.

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Section: Resultsmentioning

confidence: 99%

TiO₂ insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT

Qin¹,

Wang²,

Chen³

et al. 2022

Jpn. J. Appl. Phys.

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Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

et al. 2022

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The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suffer from certain parasitic and reliability concerns that limit their performance. This paper aims to review the latest experimental evidence regarding HEMT technologies on the parasitic issues that affect aluminum gallium nitride (AlGaN)/GaN HEMTs. The first part of this review provides a brief introduction to AlGaN/GaN HEMT technologies, and the second part outlines the challenges often faced during HEMT fabrication, such as normally-on operation, self-heating effects, current collapse, peak electric field distribution, gate leakages, and high ohmic contact resistance. Finally, a number of effective approaches to enhancing the device’s performance are addressed.

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Properties Investigation and Damage Analysis of GaN Photoconductive Semiconductor Switch Based on SiC Substrate

Xu,

Jiang,

Cai

et al. 2024

Micromachines

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The GaN photoconductive semiconductor switches (PCSSs) with low leakage current and large on-state current are suitable for several applications, including fast switching and high-power electromagnetic pulse equipment. This paper demonstrates a high-power GaN lateral PCSS device. An output peak current of 142.2 A is reached with an input voltage of 10.28 kV when the GaN lateral PCSS is intrinsically triggered. In addition, the method of retaining the AlGaN/GaN heterostructure between electrodes on PCSSs is proposed, which results in increasing the output peak current of the PCSS. The damage mechanism of the PCSS caused by a high electric field and high excitation laser energy is analyzed. The obtained results show that the high heat generated by the large current leads to the decomposition of GaN, and thus, the Ga forms a metal conductive path, resulting in the failure of the device.

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The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT

Cited by 3 publications

References 30 publications

TiO₂ insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT

TiO₂ insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Properties Investigation and Damage Analysis of GaN Photoconductive Semiconductor Switch Based on SiC Substrate

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The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT

Cited by 3 publications

References 30 publications

TiO2 insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT

TiO2 insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Properties Investigation and Damage Analysis of GaN Photoconductive Semiconductor Switch Based on SiC Substrate

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TiO₂ insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT

TiO₂ insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT