The influence of the electric and magnetic fields on donor impurity electronic states and optical absorption coefficients in a core/shell GaAs/Al$$_{0.33}$$Ga$$_{0.67}$$As ellipsoidal quantum dot

Ed-Dahmouny, A.; Arraoui, R.; Jaouane, M.; Fakkahi, A.; Sali, A.; Es-Sbai, N.; El-Bakkari, K.; Zeiri, N.; Duque, C. A.

doi:10.1140/epjp/s13360-023-04281-x

Cited by 15 publications

(1 citation statement)

References 55 publications

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“…In the next section, and for simplicity of notation, we consider the initial state (i = 1) to be 1s and the final state ( f = 2) to be the 1p state, so the term M i f in Equation ( 3) is simply designated as |M 12 | 2 . In our study, the electromagnetic radiation is polarized along the z-axis, and |M 12 | 2 is given by the following expression [50][51][52]:…”

Section: Calculation Of Electronic and Optical Propertiesmentioning

confidence: 99%

GaAs Quantum Dot Confined with a Woods–Saxon Potential: Role of Structural Parameters on Binding Energy and Optical Absorption

Dakhlaoui,

Belhadj,

Elabidi

et al. 2023

Inorganics

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We present the first detailed study of optical absorption coefficients (OACs) in a GaAs quantum dot confined with a Woods–Saxon potential containing a hydrogenic impurity at its center. We use a finite difference method to solve the Schrödinger equation within the framework of the effective mass approximation. First, we compute energy levels and probability densities for different parameters governing the confining potential. We then calculate dipole matrix elements and energy differences, E1p−E1s, and discuss their role with respect to the OACs. Our findings demonstrate the important role of these parameters in tuning the OAC to enable blue or red shifts and alter its amplitude. Our simulations provide a guided path to fabricating new optoelectronic devices by adjusting the confining potential shape.

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Section: Calculation Of Electronic and Optical Propertiesmentioning

confidence: 99%

GaAs Quantum Dot Confined with a Woods–Saxon Potential: Role of Structural Parameters on Binding Energy and Optical Absorption

Dakhlaoui,

Belhadj,

Elabidi

et al. 2023

Inorganics

View full text Add to dashboard Cite

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Optical Properties of Three‐Electron GaAs/Al_xGa₁₋_xAs QDs with Finite Confinement Potential

Yakar,

Çakır,

Özmen

2024

Advcd Theory and Sims

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In the case of finite confinement potential, the average energies and corresponding wave functions for the 1s2nl configurations, in which nl = 2s, 2p, 3d, and 4f, of three‐electron GaAs/AlxGa1−xAs quantum dot with and without impurity are computed by using a new variational approach which is a combination of Quantum Genetic Algorithm procedure and Hartree–Fock–Roothaan method. Using the calculated average energies and wave functions, a detailed investigation of the linear, third‐order nonlinear and total absorption coefficients (ACs) and the refractive index changes (RICs) for the quantum dot is performed, and the obtained results are presented as a function of dot radius and photon energies. The results show that the dot radius, the impurity charge, and the height of potential barrier have a strong influence on the average energies and absorption spectra of the system. As the potential barrier height increases, the peak positions of the ACs and RICs shift toward higher energy, and there is a significant increase in the amplitudes of the absorption spectra as the potential barrier height increases. In addition, the electron wave functions begin to enter the quantum well at smaller dot radii with increasing barrier height.

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Investigation of the Electronic Structure in GaAs/Al_xGa_1‐xAs Quantum Dots with Four Electrons

Çakır,

Yakar,

Özmen

2024

Advcd Theory and Sims

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In this paper, a detailed analysis of the electronic structure of four‐electron quantum dots is performed with finite confinement potential by a modified variational optimization approach based mainly on the quantum genetic algorithm and the Hartree‐Fock‐Roothaan method. For the ground and higher excited configurations, our analysis covers a range of parameters like the average energies of ground and excited states, singlet and triplet state energies, orbital energies, and two‐electron Coulomb and exchange interaction energies. One‐electron kinetic energy, the Coulomb potential energy between electrons and impurity, the confinement potential energy for the electrons, and the probability of finding an electron inside or outside the quantum well are also studied. The results demonstrate that both spatial confinement and the height of the potential barrier have a pronounced effect on all energies in the strong and intermediate confinement regions, but this influence weakens significantly in large dot radii. The most substantial difference between singlet and triplet energies occurs in the 1s22s2p configurations, with this difference decreasing in higher configurations. Significant increases in the 1s and 2s orbital energies are observed at the dot radii where the 2p, 3d, and 4f electrons from the outermost orbit begin to penetrate the well.

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The influence of the electric and magnetic fields on donor impurity electronic states and optical absorption coefficients in a core/shell GaAs/Al$$_{0.33}$$Ga$$_{0.67}$$As ellipsoidal quantum dot

Cited by 15 publications

References 55 publications

GaAs Quantum Dot Confined with a Woods–Saxon Potential: Role of Structural Parameters on Binding Energy and Optical Absorption

GaAs Quantum Dot Confined with a Woods–Saxon Potential: Role of Structural Parameters on Binding Energy and Optical Absorption

Optical Properties of Three‐Electron GaAs/Al_xGa₁₋_xAs QDs with Finite Confinement Potential

Investigation of the Electronic Structure in GaAs/Al_xGa_1‐xAs Quantum Dots with Four Electrons

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The influence of the electric and magnetic fields on donor impurity electronic states and optical absorption coefficients in a core/shell GaAs/Al$$_{0.33}$$Ga$$_{0.67}$$As ellipsoidal quantum dot

Cited by 15 publications

References 55 publications

GaAs Quantum Dot Confined with a Woods–Saxon Potential: Role of Structural Parameters on Binding Energy and Optical Absorption

GaAs Quantum Dot Confined with a Woods–Saxon Potential: Role of Structural Parameters on Binding Energy and Optical Absorption

Optical Properties of Three‐Electron GaAs/AlxGa1−xAs QDs with Finite Confinement Potential

Investigation of the Electronic Structure in GaAs/AlxGa1‐xAs Quantum Dots with Four Electrons

Contact Info

Product

Resources

About

Optical Properties of Three‐Electron GaAs/Al_xGa₁₋_xAs QDs with Finite Confinement Potential

Investigation of the Electronic Structure in GaAs/Al_xGa_1‐xAs Quantum Dots with Four Electrons