“…6 Alumina has a dielectric constant, higher than that of SiO 2 , which can effectively be fine-tuned by adjusting the filling factor of porous AAO, 7 which is advantageous for the fabrication of capacitors, 8,9 thin-film transistors, 10,11 RF antennae, 12 and chemical sensors. 3,5,13 A crucial step in the fabrication of AAO-based devices is the deposition of conductive tracks, typically accomplished with physical vapour deposition (PVD) methods, thermal evaporation or magnetron sputtering. 3,7,9,13 These techniques, however, require a significant investment in both equipment and expertise, and their application may be challenging in the case of AAO due to its complex geometry and high-aspect-ratio pores.…”