The Influence of the Porosity of Silicon Layer on the Elastic Properties of Hybrid SiC/Si Substrates

Elastic properties of porous silicon layer of hybrid SiC/Si substrates grown by the atomic substitution method are investigated. The feature of the growth method is the formation of the macroporous silicon layer at the SiC/Si interface during growth. The elastic properties of the layer are studied using the finite element method. The biaxial modulus of the porous silicon is obtained as a function of porosity considering the different shape of the pores and presence of thin SiC boundary layer. The presence of the pores in the silicon layer adjacent to SiC results in the decrease of the elastic moduli by about 35%. However, this leads to a negligibly small change of the substrate curvature.

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The Influence of the Porosity of Silicon Layer on the Elastic Properties of Hybrid SiC/Si Substrates

Cited by 4 publications

References 8 publications

SiC/Si as a New Platform for Growth of Wide-Bandgap Semiconductors

SiC/Si as a New Platform for Growth of Wide-Bandgap Semiconductors

Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma nitrogen activation

Elastic properties of porous silicon layer of hybrid SiC/Si substrates

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