The influence of the silicon substrate temperature on structural and optical properties of thin-film cadmium sulfide formed with femtosecond laser deposition

Tong, Xiaofeng; Jiang, Desheng; Li, Y.; Liu, Z.M.; Luo, Ming

doi:10.1016/j.physb.2006.02.012

Cited by 24 publications

(10 citation statements)

References 17 publications

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“…As already indicated, atomic species resulting from UV ablation of the targets impinge on the substrate with higher kinetic energies. This leads to higher energy of mobility and diffusion of the species on the forming deposit and, with similarity to observations gathered from studies of fs PLD of CdS and other materials, ,, allows the orientation in new crystalline conformations and stoichiometries, different from those of the original target material…”

Section: Resultssupporting

confidence: 69%

“…Nanostructures of II−VI semiconductor materials such as CdS and ZnS are attracting expanding interest because they show significant quantum confinement effects which influence their electrical and optical properties. ,, The possibility to tune the properties of the nanostructures also motivates research into their application in photovoltaic, photonic, and optoelectronic devices and sensors. Nanoparticles and nanostructures of CdS and ZnS have been produced using wet chemistry methods, Langmuir-Blodget, sputtering, molecular beam epitaxy, and PLD with nanosecond and femtosecond pulses. ,− In previous work, we have shown that laser deposits produced by ablating a CdS target with pulses of 60 fs, focused down to a beam diameter of 50 μm, at three different wavelengths of 266, 400, and 800 nm consist of isolated nanoparticles with average diameters that scale with wavelength. In order to explore further the wavelength effect in fs PLD, in this work, CdS and ZnS nanostructured deposits have been grown on Si(100), glass, and mica substrates by laser ablating CdS and ZnS targets in vacuum using ≈300 fs laser pulses at 527 and 263 nm.…”

Section: Introductionmentioning

confidence: 99%

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Ultrafast Laser Ablation and Deposition of Wide Band Gap Semiconductors

et al. 2011

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Isolated nanoparticles of the wide band gap II−VI semiconductors CdS and ZnS were produced by ultrafast pulsed laser deposition using pulses of ≈300 fs at two wavelengths of 527 and 263 nm. Upon repetitive target irradiation, the isolated nanoparticles assemble to form a nanostructured film whose structural and chemical properties are compared to those of the targets. UV ablation at 263 nm yields nanoparticles of 5 nm average diameter in the case of CdS. At this wavelength the crystalline phase and stoichiometry of the films markedly differ from those of the target. At 527 nm the average size of the nanoparticles is larger, about 13 nm, but the deposits keep the structural and chemical characteristics of the target. For ZnS the size of the nanoparticles is larger than for CdS although their properties also resemble those of the target when they are produced upon irradiation in the visible. The results obtained allow discussion of the interplay between the light absorption step, the plume dynamics, and the film growth and their impact on the structure and nanometer morphology of the deposited material, while at the same time they exemplify the possibility of their control through the choice of the wavelength of the femtosecond pulses

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Section: Resultssupporting

confidence: 69%

Section: Introductionmentioning

confidence: 99%

Ultrafast Laser Ablation and Deposition of Wide Band Gap Semiconductors

et al. 2011

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“…Various studies [1][2][3][4][5][6][7] have shown the possibility of using fs PLD as a general route to nanoparticle formation and have demonstrated that the nature of nanostructured deposits grown by fs PLD strongly depends on the material and deposition conditions. fluence, 20 substrate material and temperature 21,22 has been characterized only at the laser wavelength of 800 nm.…”

Section: Introductionmentioning

confidence: 99%

Femtosecond Pulsed Laser Deposition of Nanostructured CdS Films

et al. 2010

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In this work we report an investigation of the properties of nanostructured deposits obtained from femtosecond pulsed laser deposition of CdS sintered targets. Specifically, we address the effect of laser irradiation wavelength, laser fluence and substrate temperature (from 25 to 450 ºC). The composition of the deposits was characterized using X-ray photoelectron spectroscopy (XPS), their crystallinity by Xray diffraction (XRD) and the surface morphology was studied by environmental scanning electron microscopy (ESEM) and atomic force microscopy (AFM). It has been found that the smallest nanoparticles, with an average diameter of 25 nm and a narrow size distribution, together with particulates in the range 80-120 nm, are obtained at the shortest laser wavelength of 266 nm on room temperature substrates. Deposits do not contain microscopic droplets in any of the explored conditions. 3

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“…The maximum intensity of PL spectra is in the wavelength of 460 nm which is related to the band to band region. The sample a1 has two peak in 460 nm and 680 nm which is related to band to band and sulphur vacancy region [23, 24]. The sulphur vacancy of sample a1 is because of the very fast release of Cd ion and the slow release of sulphur in comparison with cadmium.…”

Section: Resultsmentioning

confidence: 99%

Effect of bath temperature and concentration of buffer salt on the optoelectronic characteristics of CdS thin films synthesised by chemical bath deposition method

Kakhaki

Youzbashi

Sangpour

et al. 2016

Micro & Nano Letters

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CdS thin films were deposited onto glass substrate by the chemical bath deposition method, using cadmium chloride (CdCl 2) as a source of cadmium, thiourea (CS(NH 2) 2) as a source of sulphur, ammonium nitrate (NH 4 NO 3) as buffer salt and ammonia as pH controller and complexing agent. The effects of the deposition temperature and the concentration of ammonium nitrate on the structural, compositional, optical and optoelectrical properties of CdS thin films were investigated. The optimised sample was utilised for fabrication of photodetectors. A high photosensitivity and a short response time was reported for the photodetectors based on the sample with the bath temperature of 65°C and concentration of ammonium nitrate of 1.5 M compare with the other samples.

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The influence of the silicon substrate temperature on structural and optical properties of thin-film cadmium sulfide formed with femtosecond laser deposition

Cited by 24 publications

References 17 publications

Ultrafast Laser Ablation and Deposition of Wide Band Gap Semiconductors

Ultrafast Laser Ablation and Deposition of Wide Band Gap Semiconductors

Femtosecond Pulsed Laser Deposition of Nanostructured CdS Films

Effect of bath temperature and concentration of buffer salt on the optoelectronic characteristics of CdS thin films synthesised by chemical bath deposition method

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