The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells

Liu, Song‐Tao; Yang, Jing; Zhao, Degang; Jiang, Desheng; Liang, Feng; Chen, P.; Zhu, Jianjun; Liu, Z.S.; Liu, W.; Xing, Yufeng; Peng, Liyuan; Zhang, L.Q.; Wang, W.J.; Li, M.; Zhang, Y.T.; Du, Guotong

doi:10.1016/j.optmat.2018.10.034

Cited by 9 publications

(4 citation statements)

References 22 publications

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“…For the RTA@0 sample, the strain was significantly degraded compared with that of the Non-RTA@0 sample, which can be interpreted as the relief of the annealed strain. In contrast, the increased strain in the RTA@600 sample can be considered the result of the competition between the strain introduced by both the SiO 2 capping and the relief stress during the annealing process [ 29 ]. As mentioned above, it was found that the atomic intermixing at the strain-enhanced interface was the main reason for the strain variation and the disappearance of the satellite peaks.…”

Section: Resultsmentioning

confidence: 99%

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Yang,

Zhang,

et al. 2023

Materials

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Quantum-well intermixing (QWI) technology is commonly considered as an effective methodology to tune the post-growth bandgap energy of semiconductor composites for electronic applications in diode lasers and photonic integrated devices. However, the specific influencing mechanism of the interfacial strain introduced by the dielectric-layer-modulated multiple quantum well (MQW) structures on the photoluminescence (PL) property and interfacial quality still remains unclear. Therefore, in the present study, different thicknesses of SiO2-layer samples were coated and then annealed under high temperature to introduce interfacial strain and enhance atomic interdiffusion at the barrier–well interfaces. Based on the optical and microstructural experimental test results, it was found that the SiO2 capping thickness played a positive role in driving the blueshift of the PL peak, leading to a widely tunable PL emission for post-growth MQWs. After annealing, the blueshift in the InGaAs/AlGaAs MQW structures was found to increase with increased thickness of the SiO2 layer, and the largest blueshift of 30 eV was obtained in the sample covered with a 600 nm thick SiO2 layer that was annealed at 850 °C for 180 s. Additionally, significant well-width fluctuations were observed at the MQW interface after intermixing, due to the interfacial strain introduced by the thermal mismatch between SiO2 and GaAs, which enhanced the inhomogeneous diffusion rate of interfacial atoms. Thus, it can be demonstrated that the introduction of appropriate interfacial strain in the QWI process is of great significance for the regulation of MQW band structure as well as the control of interfacial quality.

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Section: Resultsmentioning

confidence: 99%

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Yang,

Zhang,

et al. 2023

Materials

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“…As mentioned in the experimental section, the growth temperature of the GaN barrier layers was higher than that of the InGaN well layers to enhance the crystal quality of GaN materials. In fact, from another perspective, the process of the high-temperature growth of the GaN barriers can be treated as an annealing process of the InGaN well materials [32]. It is commonly known that the annealing process is widely utilized to improve the crystal quality of semiconductor materials by eliminating the crystal defects.…”

Section: Resultsmentioning

confidence: 99%

Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells

et al. 2022

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The optical properties of InGaN/GaN violet light-emitting multiple quantum wells with different thicknesses of GaN quantum barriers are investigated experimentally. When the barrier thickness decreases from 20 to 10 nm, the photoluminescence intensity at room temperature increases, which can be attributed to the reduced polarization field in the thin-barrier sample. However, with a further reduction in the thickness to 5 nm, the sample’s luminescence intensity decreases significantly. It is found that the strong nonradiative loss process induced by the deteriorated crystal quality and the quantum-tunneling-assisted leakage of carriers may jointly contribute to the enhanced nonradiative loss of photogenerated electrons and holes, leading to a significant reduction in photoluminescence intensity of the sample with nanoscale ultrathin GaN quantum barriers.

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“…It is generally believed that high-temperature treatment of InGaN may lead to the formation of In clusters [22,23]. By removing the In clusters through hydrogen treatment [24] or thermal annealing [25,26] after the growth of QWs, the luminescence performance of MQWs can be improved. Recently, Hou et al [26] reported that the interface morphology of InGaN/GaN MQWs can be improved by thermal annealing treatment on InGaN QWs.…”

Section: Introductionmentioning

confidence: 99%

Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells

et al. 2022

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In this work, the photoluminescence (PL) properties of three as-grown InGaN/GaN multiple quantum well (MQW) structures which are heat-treated under different temperatures with nitrogen (N2) atmosphere are investigated. Temperature-dependent photoluminescence (PL) analysis was used to characterize the depth of localized states and defect density formed in MQWs. By fitting the positions of luminescence peaks with an LSE model, we find that deeper localized states are formed in the MQWs after high-temperature treatment. The experimental results show that the luminescence intensity of the sample heat-treated at 880 °C is significantly improved, which may be due to the shielding effect of In clusters on defects. While the luminescence efficiency decreases because of the higher defect density caused by the decomposition of the InGaN QW layer when the sample is heat-treated at 1020 °C. Moreover, the atomic force microscope results show that the increase in heat-treatment temperature leads to an increase in the width of surface steps due to the rearrangement of surface atoms in a high-temperature environment.

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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells

Cited by 9 publications

References 22 publications

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells

Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells

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