The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer

Yolcu, Gamze; Simsek, Irem; Kekül, Reyhan; Altuntaş, İsmail; Horoz, Sabit; Demir, İlkay

doi:10.1016/j.micrna.2022.207301

Cited by 4 publications

(10 citation statements)

References 43 publications

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“…where FWHM 0001 (FWHM 1 100 ) is the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane full width at half maxima (FWHM) value measured along [0001] ([1-100]) direction.…”

Section: Crystal Qualitymentioning

confidence: 99%

“…Developing non-polar DUV LEDs on non-polar aluminum nitride (AlN) templates is considered to be a promising approach to solve the issues mentioned above [4,5]. Here, the 'non-polar' usually refers to the growth along [11][12][13][14][15][16][17][18][19][20] (a-axis) or (m-axis). The growth planes have equal numbers of the Group III and Group V atoms.…”

Section: Introductionmentioning

confidence: 99%

“…Approaches including the epitaxial lateral overgrowth (ELO) [9,10], surface pretreatment [11][12][13], pulsed atomic layer epitaxy [14,15] and pulsed flow growth [16,17] methods have been proposed to effectively improve the surface flatness. More seriously, high density basal plane stacking faults (BPSFs) in the range of 10 5 -10 6 cm −1 are widely observed in the non-polar AlN films, owing to the inherent mismatch problems in heteroepitaxial system [18].…”

Section: Introductionmentioning

confidence: 99%

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Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates

Cai¹,

Guo²,

Liu³

et al. 2022

Semicond. Sci. Technol.

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A-plane aluminum nitride (AlN) with high quality is crucial to fabricate high-performance non-polar deep-ultraviolet optoelectronic devices. In this work, we prepared crystalline a-plane AlN films on r-plane sapphire substrates by combining reactive magnetron sputtering and high temperature annealing (HTA). The effects of N2 flux and RF sputtering power on the crystal quality, the surface morphology and the in-plane stress state of a-plane AlN films were comprehensively investigated. The results suggest that the properties of high temperature annealed a-plane AlN (HTA-AlN) films positively depend on the initial states of the sputtered AlN (SP-AlN) films. Increasing the N2 flux or the RF sputtering power can improve the crystalline quality of SP-AlN films by reducing the kinetic energy of deposited particles, which facilitates a-plane AlN deposition. A higher N2 flux smoothens the surface morphology due to the relieved bombardment effect, which is confirmed by the enlarged in-plane tensile stress state. However, a higher sputtering power leads to a rougher surface because of the accelerated deposition rate. With optimized sputtering parameters, a high-quality a-plane HTA-AlN template was obtained with full width at half maximum values of (11-20) plane X-ray rocking curves as low as 1188 and 1224 arcsec along [0001] and [1-100] directions, respectively. The surface presents an ordered stripe-like morphology with a root-mean-square value of 0.79 nm. Our work provides a convenient and effective strategy to prepare high quality a-plane AlN templates and accelerate the versatile application of non-polar DUV-LED devices.

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“…where FWHM 0001 (FWHM 1 100 ) is the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane full width at half maxima (FWHM) value measured along [0001] ([1-100]) direction.…”

Section: Crystal Qualitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates

Cai¹,

Guo²,

Liu³

et al. 2022

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Various methods have been developed to suppress BPSFs, such as introducing an SiN x interlayers [9][10][11], epitaxial lateral overgrowth [12][13][14], replacing the AlN buffer with ZnO buffer layers, optimizing the thickness of AlN buffer layers and ammonia thermal treatment [15][16][17]. To effectively eliminate the surface undulated morphology, approaches including surface pretreatment [18][19][20], two-step growth process with modulation of V/III ratio [21,22] and pulsed flow growth [23,24] methods have been proposed. These attempts are encouraging, though some of them are complex and have a noticeable effect only on reducing BPSFs or on improving the surface morphology.…”

Section: Introductionmentioning

confidence: 99%

“…(a) shows the(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane 2 θ scanning results of AlN buffer layers measured in the range from 40 • to 70 • . The SP-buffer shows the least pronounced aplane AlN diffraction peak (around 59 • ), suggesting the SPbuffer has the highest crystal disorder degree.…”

mentioning

confidence: 99%

Improved crystallinity and surface morphology of a-plane AlN grown on high temperature annealed AlN/sapphire template by pulsed-flow mode metal-organic vapor phase epitaxy

Cai

Guo

Liu

et al. 2023

Semicond. Sci. Technol.

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Preparing high quality non-polar aluminum nitride (AlN) templates is the key to improving the performance of non-polar deep-ultraviolet light-emitting diodes. In this study, we investigated the effect of buffer layer on the crystallinity and surface morphology of a-plane AlN films regrown by pulsed-flow mode metal-organic vapor phase epitaxy (MOVPE). Three buffer layers were compared including low-temperature AlN buffer layer grown by MOVPE (MO-buffer), sputtered AlN buffer layer (SP-buffer), and high-temperature annealed sputtered AlN buffer layer (HTA-buffer). It is found that the (11-20) plane X-ray rocking curve-full width at half maximum (XRC-FWHM) values of a-plane AlN films are significantly reduced after the regrowth process. Thanks to the high crystalline quality of HTA-buffer, AlN regrown on HTA-buffer exhibits the smallest (11-20) plane XRC-FWHM values of 1260/ 1440 arcsec along the [0001]/ [1-100] direction. The mosaic tilt and BPSF density are estimated to be 0.41° and 1.76×106 cm-1, respectively. The surface shows a uniform stripe-like pattern with the lowest root mean square (RMS) value of 0.82 nm. Furthermore, the a-plane AlN epilayer regrown on HTA-buffer displays a weak in-plane stress anisotropy and high optical transmittance in the ultraviolet-visible region. Our work suggests that combining the pulsed-flow mode regrowth with HTA-AlN buffer layer is a promising route to prepare high-quality a-plane AlN templates for efficient non-polar deep-ultraviolet light emitters.

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High-quality AlN growth: a detailed study on ammonia flow

Yolcu

Koçak

Ünal

et al. 2023

J Mater Sci: Mater Electron

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The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer

Cited by 4 publications

References 43 publications

Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates

Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates

Improved crystallinity and surface morphology of a-plane AlN grown on high temperature annealed AlN/sapphire template by pulsed-flow mode metal-organic vapor phase epitaxy

High-quality AlN growth: a detailed study on ammonia flow

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