The influence of ultrasonic waves on the characteristics of the radiation detector

Abstract

The paper presents the results of a study of the field dependences of charge losses, silicon diffusion detectors that allow identifying single atoms and their clusters acting as charge carrier capture centers. In electric fields E > 1470 V/cm, there is an effective decrease in the capture processes, which manifests itself in the form of straightening of the field dependences of charge losses and in the narrowing of spectral lines. Effects - an ultrasonic field with an intensity of I * = 0.4 W / cm2 and a frequency of f = 15 MHz, on samples for a time t £ 45 minutes, leads to an increase in the amplitude of the signal. It is established that ultrasonic exposure leads to a decrease in charge loss, drift time and an improvement in the energy resolution of detectors. It should also be noted that fluctuations of the impurity relief in the Si-p-type volume are smoothed out after low-power ultrasonic waves pass through it for a long time, as evidenced by a significant decrease in the effective size of local defect clusters.

Photoelectric characteristics of Si-photocetitors

“…Thus, the dependence I кз (V c ) is mainly due to an increase in the lifetime , which is influenced by the relative position of the energy levels of the capture and recombination centers. The theory gives the following well-known expression for the value , see for example [7][8][9]:…”

“…The samples were heated using D818 zener diodes (6), through which a direct current was passed. The temperature was controlled using a thermocouple (7) with an accuracy of  =  0.1 K. The sample was placed in a vacuum chamber that had a glass window (8). The electrical signal from the p + -Au contact was recorded using a clamping contact (9).…”