2012
DOI: 10.1016/j.solmat.2012.01.042
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The influence of wrinkled ZnO on inverted low bandgap thin film solar cells

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Cited by 14 publications
(16 citation statements)
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References 29 publications
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“…(a) Ramping rate with respect to time of static annealing (SA) process for the ZnO layers annealed at 100 °C, 150 °C, 170 °C, and 200 °C. (b) The correlation among the concentration of solution, annealing temperature and heating rate was shown in the map by the analysis between our work and previous ones. (c) Comparison of heating mechanics between dynamic annealing (DA) and static annealing (SA).…”
Section: Resultsmentioning
confidence: 56%
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“…(a) Ramping rate with respect to time of static annealing (SA) process for the ZnO layers annealed at 100 °C, 150 °C, 170 °C, and 200 °C. (b) The correlation among the concentration of solution, annealing temperature and heating rate was shown in the map by the analysis between our work and previous ones. (c) Comparison of heating mechanics between dynamic annealing (DA) and static annealing (SA).…”
Section: Resultsmentioning
confidence: 56%
“…24 ZnO waves were prepared by spin coating of a sol−gel on ITO followed by annealing at 200 °C for 30 min in an oven after SA with an unknown ramping rate 24−30 for a 0.5 M ZnO solution. 25 ZnO ripples were prepared by depositing a sol−gel solution and heating the layer to 375 °C after DA with a ramping rate of 22 °C/min for a 0.75 M solution. 26 All of these studies used DA processes and high temperatures (over 200 °C) to achieve the wrinkle structures, except the SA process by Chen.…”
Section: Introductionmentioning
confidence: 99%
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“…Recently, applications of ZnO nanorods and thin films in energy conversion, such as in electronic and optoelectronic devices such as transparent conductors, solar cell windows, gas sensors, surface acoustic wave (SAW) devices, heat mirrors, dye sensitized solar cells and thermoelectronics, have attracted increasing research interest [1][2][3][4][5].…”
Section: Introductionmentioning
confidence: 99%
“…Thus, the active layer may be penetrated by the ZnO nanorods, and the device's performance is reduced. 32 Therefore, controlling the spin-coating speed of the active layer is an important issue for a device with ZnO NRs.…”
Section: Resultsmentioning
confidence: 99%