The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

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The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

Abstract: By reducing the AlGaN barrier growth rate, the degree of polarization and the performance of AlGaN-based DUV LEDs are increased.

Cited by 4 publications

References 47 publications

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