The intensity and direction of the electric field effects on off-center shallow-donor impurity binding energy in wedge-shaped cylindrical quantum dots

Belamkadem, Laaziz; Mommadi, Omar; Boussetta, Reda; Chouef, Soufiane; Chnafi, M.; Moussaouy, A. El; Vinasco, J.A.; Laroze, David; Duque, C.A.; Kenfack-Sadem, C.; Tsiaze, R.M. Keumo; Mbognou, F. C. Fobasso; Elmiad, Aissa Kerkour

doi:10.1016/j.tsf.2022.139396

Cited by 22 publications

(3 citation statements)

References 41 publications

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“…Furthermore, impurity doping is highly acclaimed for achieving desired change in the nonlinear optical (NLO) properties of low‐dimensional semiconductor nanostructures. In consequence, studies on impurity doped low‐dimensional semiconductor nanostructures have been widely explored [ 2–16 ] with special thrust on their NLO properties. [ 17–41 ]…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, impurity doping is highly acclaimed for achieving desired change in the nonlinear optical (NLO) properties of low-dimensional semiconductor nanostructures. In consequence, studies on impurity doped low-dimensional semiconductor nanostructures have been widely explored [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] with special thrust on their NLO properties. Transition of electronic density of lowest energy level to the higher energy levels in QDs deems importance in the fields of electronic transport, design of novel optoelectronic and light-emitting devices, and quantum computation.…”

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confidence: 99%

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Role of Spatial Impurity Spread on the Transition Dynamics of Doped GaAs Quantum Dot in Presence of Noise

Datta,

Bhakti,

Ghosh

2023

Physica Status Solidi (b)

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Present enquiry thoroughly explores the time‐average population transfer rate (TAPTR) of impurity doped GaAs quantum dot (QD) pursuing the change in the spatial impurity spread (SIS). The said excitation rate has been studied under the supervision of Gaussian white noise (GWN). The promotion of the ground state electronic density takes place due to different types of time‐changing fluctuations viz. simple sinusoidal field, time‐dependent confinement potential and time‐dependent magnetic field. GWN couples with the QD by additive and multiplicative modes. The work examines the joint influence of SIS, GWN and its pathway of inclusion and the nature of the time‐dependent perturbations on the attributes of the TAPTR. The TAPTR curves are composed of steadfast rise, steadfast diminish, maximization (relevant to generation of large nonlinear optical properties), minimization and saturation (suggesting dynamic freezing). The findings elucidate the means of fine‐tuning the TAPTR among the doped GaAs QD eigenstates in presence of noise, when the SIS undergoes a gradual change.This article is protected by copyright. All rights reserved.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

Role of Spatial Impurity Spread on the Transition Dynamics of Doped GaAs Quantum Dot in Presence of Noise

Datta,

Bhakti,

Ghosh

2023

Physica Status Solidi (b)

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“…For large axial parabolic quantum wells, the electric field's effect on the binding energy becomes more significant. The ground state binding energy between the hydrogen impurity and the electron, which are confined in a wedgeshaped cylindrical quantum dot, has been carefully studied by Belamkadem et al [14]. They found that the electric field's direction significantly affects the off-center impurity's binding energy.…”

Section: Introductionmentioning

confidence: 99%

Binding Energy Stark-Shift, Polarizability and Dipole Moment Response of Shallow Donor Impurity in GaAs Quantum Dots

Chnafi,

Mommadi,

Boussetta

et al. 2023

SSP

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In this study, we have examined, under the influence of an electric field applied along the z-direction, the binding energy Stark-shift, the dipole moment and the polarizability of a confined shallow donor impurity in GaAs conical-shaped quantum dots (CSQD). With square infinite confinement system, the calculations are based on the approximation of the effective mass by using the finite difference method. Our results show that increasing the radius of the CSQD structure and the electric field intensity increases the Stark shift binding energy and it has a mixed behavior as a function of the impurity position. Furthermore, the polarizability and the dipole moment vary in a quasi-linear way as a function of the dot radius and they follow a decreasing function as a function of the electric field intensity. These two physical parameters have a double behavior, they decrease with the position of the impurity in the strong confinement regime and they increase in the top regions of the quantum dot. These results provide a lot of information about the behavior of the electronic wave function which give more interesting ideas for the fabrication of optoelectronic devices.

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Population transfer dynamics in doped GaAs quantum dot modulated by noise: role of impurity stretch

Datta,

Bhakti,

Ghosh

2023

Bull Mater Sci

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The intensity and direction of the electric field effects on off-center shallow-donor impurity binding energy in wedge-shaped cylindrical quantum dots

Cited by 22 publications

References 41 publications

Role of Spatial Impurity Spread on the Transition Dynamics of Doped GaAs Quantum Dot in Presence of Noise

Role of Spatial Impurity Spread on the Transition Dynamics of Doped GaAs Quantum Dot in Presence of Noise

Binding Energy Stark-Shift, Polarizability and Dipole Moment Response of Shallow Donor Impurity in GaAs Quantum Dots

Population transfer dynamics in doped GaAs quantum dot modulated by noise: role of impurity stretch

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