The oxidation process of a TiC(100) surface has been investigated by photoelectron spectroscopy (PES) and low-energy electron diffraction (LEED). It is found that, when the surface is exposed to O 2 at room temperature, the C atoms in the substrate are depleted and the substrate's Ti atoms are oxidized to form a disordered TiO x (1:5 < x < 2:0) layer at 100-4000 L. When the surface covered with the TiO x layer is heated, the work function decreases with increasing heating temperature. The work function reaches its minimum value, which is lower than that of the clean surface by $1:0 eV, upon heating at 900-1000 C. With heating to $1000 C, the TiO x oxide layer is reduced to a TiO-like state. The structure of the TiO-like layer is discussed on the basis of LEED and angle-resolved PES results, and it is proposed that the oxide layer is a well-ordered TiO(100) layer which is epitaxially grown on the TiC(100) surface.