The interface density dependence of the electrical properties of 0.9Pb(Sc _0.5 Ta _0.5 )O ₃ –0.1PbTiO ₃ /0.55Pb(Sc _0.5 Ta _0.5 )O ₃ –0.45PbTiO

Abstract

The 0.9Pb(Sc0.5Ta0.5)O3–0.1PbTiO3/0.55Pb(Sc0.5Ta0.5)O3–0.45PbTiO3 multilayer thin films ((PSTT10/45)n, n = 1–6, 10) are deposited on SiO2/Si(100) substrates by radio frequency magnetron sputtering technique with LaNiO3 buffer and electrode layer, and the films are subsequently annealed by a two-step rapid thermal approach. It is found that the interfacial density of the film has an important influence on the electric property of the film. The electric property of the film increases and reaches its critical point with the increase of interface density, and then decreases with the further increase of the interface density. With an interfacial density of 16 μm−1, the film shows an optimized dielectric property (high dielectric constant, εr = 765, lowest dielectric loss, tanδ = 0.041, at 1 kHz) and ferroelectric property (highest remnant polarization, 2Pr = 36.9 μC/cm2, low coercive field, 2Ec = 71.9 kV/cm). The possible reason for the electric behavior of the film is the competition of the interface stress with the interface defect.

Designing high k dielectric films with LiPON–Al2O3 hybrid structure by atomic layer deposition

“…Conductance loss and polarization loss are both contributed to the tan δ . [30][31][32][33][34] The movement of Li + under external voltage (polarization behavior) is responsible for the high tan δ in these hybrid structures than that in the Al 2 O 3 matrix, which has been proved in literatures. [33,34] At low frequency (∼ 1 kHz), tan δ of the hybrid structures increase as the concentration of LiPON in the hybrid structure increased.…”