The intrinsic electrical equivalent circuit of a laser diode

Katz, J.; Margalit, S.; Harder, C.; Wilt, D. P.; Yariv, Amnon

doi:10.1109/jqe.1981.1070628

Cited by 109 publications

(31 citation statements)

References 5 publications

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“…The parameter A, usually associated with nonradiative recombination, was considerably smaller (Aϳ1ϫ10 5 s Ϫ1 ) than the values found previously in gain guided VCSELs (Aϳ0.5-2.5ϫ10 8 s Ϫ1 ). 5 This suggests that the nonradiative, defect related, recombination processes are negligible in our lasers. The radiative recombination coefficient estimated here, Bϳ1.3ϫ10 Ϫ10 cm 3 s Ϫ1 , is the same as the value recently reported in In 0.35 Ga 0.65 As/GaAs edge emitting multiple QW lasers.…”

Section: ͑1͒mentioning

confidence: 91%

“…5,6 This model does not consider the carrier transport and capture dynamics discussed elsewhere 7,8 because it was assumed that the capture time is small and the escape time from the wells is very large compared to the carrier lifetime in the wells. In this simple model, d is the effective lifetime of the carriers confined in the quantum wells, without considering the carrier distribution in the barriers and separate confinement regions.…”

mentioning

confidence: 99%

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Differential carrier lifetime in oxide-confined vertical cavity lasers obtained from electrical impedance measurements

Giudice¹,

Kuksenkov²,

Temkin³

et al. 1999

Applied Physics Letters

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Differential carrier lifetime measurements were performed on index-guided oxide-confined vertical cavity surface emitting lasers operating at 980 nm. Lifetimes were extracted from laser impedance measurements at subthreshold currents, with device size as a parameter, using a simple small-signal model. The carrier lifetimes ranged from 21 ns at 9 A, to about 1 ns at a bias close to threshold. For a 6ϫ6 m 2 oxide aperture device the threshold carrier density was n th ϳ2ϫ10 18 cm Ϫ3 . The effect of carrier diffusion was also considered. An ambipolar diffusion coefficient of D ϳ11 cm 2 s Ϫ1 was obtained. © 1999 American Institute of Physics. ͓S0003-6951͑99͒00507-0͔Carrier lifetime measurements are an important tool in semiconductor laser characterization. 1,2 Recently, a new electrical technique for differential carrier lifetime measurements was developed. 2 It originally applied to edge emitting lasers with bulk active region. More recently, it has been applied to vertical cavity surface emitting lasers ͑VCSELs͒ 3 with quantum wells ͑QWs͒ in the active region. In this letter, experimental results on differential carrier lifetimes in indexguided oxide-confined VCSELs are reported. Lifetimes were obtained from laser impedance measurements at subthreshold currents and the equivalent circuit modeling. Threshold carrier densities and the corresponding recombination parameters were calculated as a function of device size. In addition, the effect of lateral carrier diffusion out of the active region was also considered.Devices studied in this work were oxide-confined InGaAs VCSELs lasing at 980 nm. The current aperture was obtained by partial oxidation of two quarter-wavelength GaAlAs layers. 4 Lasers with aperture sizes in the range of 6-12 m had room temperature threshold currents from 220 to 600 A. The laser impedance was measured from 1 MHz up to 3 GHz. Measurements were performed for bias currents between 9 A and threshold. Figure 1 presents the frequency dependence of the measured impedance of a device with a ϳ8ϫ8 m 2 active region, with a threshold current I th Ϸ240 A, at 40 A of drive current. The measured laser impedance was modeled using the small-signal subthreshold equivalent circuit shown in the inset of Fig. 1. The parameters included in this model were the following: an inductance L associated with a bond wire, a parallel combination of a resistance R m and capacitance C m associated with the top mirror interfaces, and a parallel combination of a resistance R d and a capacitance C a representing the active region. The impedance of the bottom mirror was neglected. The total impedance of the circuit can be written aswhere d ϭR d C a is the characteristic time equal to the differential carrier lifetime. 5,6 This model does not consider the carrier transport and capture dynamics discussed elsewhere 7,8 because it was assumed that the capture time is small and the escape time from the wells is very large compared to the carrier lifetime in the wells. In this simple model, d is the effective lifetime of the carri...

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Section: ͑1͒mentioning

confidence: 91%

mentioning

confidence: 99%

Differential carrier lifetime in oxide-confined vertical cavity lasers obtained from electrical impedance measurements

Giudice¹,

Kuksenkov²,

Temkin³

et al. 1999

Applied Physics Letters

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“…발광 특성을 고려 하지 않고 기존 상용프로그램을 이용하여 구동회로를 설계 하여 시제품을 개발할 경우 필연적으로 여러 번의 시행 착오 를 거치게 될 것이다. 본 논문에서는 레이저 다이오드의 이 러한 발광특성을 원리적이고 효율적으로 고려하여 주입전류 레벨에 따라 변화되는 레이저 다이오드의 PSPICE 용 등가회 로 모델을 개발하였다 [2][3][4][5][6][7] . 본 논문에서 제안된 방법의 특징 은 다층 비율방정식으로부터 직접 유도한 회로모델을 사용 함으로써 레이저 다이오드의 동작특성을 완벽하게 반영할 수 있으며, 아울러 비율방정식에 필요한 파라미터 역시 다층 양자우물의 광이득 특성을 자기충족법으로 해석하여 도출해 냄으로써 보다 실제적으로 양자우물구조에 따른 레이저 특 성의 변화를 실제 회로에 반영할 수 있다는 점이다 [8] .…”

Section: 서 론unclassified

PSPICE Modeling and Characterization of Optical Transmitter with 1550 nm InGaAsP LDs

Goo¹,

Kim

Yi³

2011

Korean Journal of Optics and Photonics

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The PSPICE equivalent circuit elements of a 1550 nm InGaAsP laser diode were derived by using multi-level rate equations. The device parameters were extracted by using a self-consistent numerical method for the optical gain properties of the MQW active regions. The resulting equivalent circuit model is also applied to an actual optical transmitter, and its PSPICE simulation results show good agreement with the measured results once the parasitic capacitance due to the packaging is taken into account.

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“…An equivalent circuit model of blue LD , once developed, could be directly used in PSPICE for design and analysis of its driver circuitry. Currently available models presented electrical small signal models via RLC circuits including the spontaneous emission and gain saturation [1,2]. Others presented revised equivalent circuit models to accommodate the two-level and three-level rate equations: one equation explained the continuity of carrier charge in the quantum wells, anther described carrier charge in the separate-confinement heterostructure (SCH), and the third recognized the gateway states introduced to connect the carriers in SCH with the carriers in quantum wells [3,4].…”

Section: Introductionmentioning

confidence: 99%

A PSPICE Circuit Modeling of Strained AlGaInN Laser Diode Based on the Multilevel Rate Equations

Lim¹,

Cho²,

Sung³

et al. 2009

Journal of the Optical Society of Korea

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PSPICE circuit parameters of the blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were extracted directly from the three level rate equations. The relevant optical gain parameters were separately calculated from the self-consistent multiband Hamiltonian. The resulting equivalent circuit model for a blue laser diode was schematically presented, and its modulation characteristics, including the pulse response and the frequency response, have been demonstrated by using a conventional PSPICE.

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The intrinsic electrical equivalent circuit of a laser diode

Cited by 109 publications

References 5 publications

Differential carrier lifetime in oxide-confined vertical cavity lasers obtained from electrical impedance measurements

Differential carrier lifetime in oxide-confined vertical cavity lasers obtained from electrical impedance measurements

PSPICE Modeling and Characterization of Optical Transmitter with 1550 nm InGaAsP LDs

A PSPICE Circuit Modeling of Strained AlGaInN Laser Diode Based on the Multilevel Rate Equations

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