The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO<sub>4</sub> through Trihalide Vapor‐Phase Epitaxy

Over the last decades, continuous technological advancements have been made in III‐nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement of traditional light sources. With the emission wavelength covering the entire visible spectrum, InGaN LEDs find various applications such as solid‐state lightings, full‐color displays, and visible light communication. However, the quantum efficiency of InGaN LEDs suffers from a dramatic decline as the emission wavelength extends from blue to green–red region. This issue restrains the lighting and display applications based on the color‐mixing monolithic lighting source system. In this review, the recent breakthroughs in long‐wavelength InGaN LEDs, together with the challenges and approaches to realize high‐indium‐composition InGaN epilayers, are introduced. These cover the different epitaxial substrates, nucleation layers, and epitaxial structures, especially multiple quantum wells active region. The related studies are also discussed to improve the long‐wavelength LEDs performance from the aspect of crystal quality, growth orientation, carrier‐injection, and 3D nanostructures. Finally, current status and perspectives for future long‐wavelength LEDs development are proposed briefly.

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Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Guo

Sun

Cui

et al. 2023

Advanced Photonics Research

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Suppression of Mixing of Metastable Zincblende Phase in GaN Crystal Grown on ScAlMgO₄ Substrates by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy

Deura,

Wada,

Fujii

et al. 2024

Physica Status Solidi (b)

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ScAlMgO4 (SAM) substrates have attracted significant attention as template substrates for fabricating bulk GaN crystals. Radio‐frequency plasma‐assisted molecular beam epitaxy (RF‐MBE) is preferred for the growth of the first GaN layer. However, the metastable zincblende (ZB) phase is mixed on the SAM substrate with a smaller terrace width, coupled with lower growth temperatures in MBE. Herein, the time evolution of GaN growth on SAM substrates is investigated to elucidate the mechanism underlying ZB mixing. ZB‐GaN is generated as stacking faults during the coalescence of the initially grown wurtzite‐ (WZ‐) GaN islands on adjacent SAM terraces, owing to the extraordinarily large step height close to three bilayers of WZ‐GaN. Therefore, high‐temperature growth on a SAM substrate with wider terraces suppresses the generation of the ZB phase in the initial growth stage. ZB‐GaN also decreases with an increase in the growth time. Based on these results, a 940 nm‐thick GaN layer is grown at 750 °C on the SAM substrate with a terrace width of 820 nm. A pure WZ‐GaN layer from the GaN/SAM interface with a flat surface with a root mean square value of below 1 nm and a dislocation density of 7.3 × 109 cm−2 is obtained.

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The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO₄ through Trihalide Vapor‐Phase Epitaxy

Cited by 2 publications

References 31 publications

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Suppression of Mixing of Metastable Zincblende Phase in GaN Crystal Grown on ScAlMgO₄ Substrates by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy

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The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO4 through Trihalide Vapor‐Phase Epitaxy

Cited by 2 publications

References 31 publications

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Suppression of Mixing of Metastable Zincblende Phase in GaN Crystal Grown on ScAlMgO4 Substrates by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy

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Product

Resources

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The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO₄ through Trihalide Vapor‐Phase Epitaxy

Suppression of Mixing of Metastable Zincblende Phase in GaN Crystal Grown on ScAlMgO₄ Substrates by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy