The investigation of Active VC and EBAC analysis utilization on test structure

Chang, Link; Wang, Kuo Yu; Wang, Simon T C; Chang, Yu Pang

doi:10.1109/ipfa.2015.7224372

Cited by 7 publications

(2 citation statements)

References 4 publications

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“…Shifts in the Fermi levels can be evaluated by the G-band peak positions [24] using Raman spectra analysis [24][25][26][27][28]; thus, we expect that variations in the density of states can be evaluated using a G-band peak position map by Raman spectroscopy. The electron beam absorbed current (EBAC) method can be used to visualize the absorbed current due to electron beam irradiation in order to identify the open and/or short points in various semiconductor devices [29][30][31][32][33][34][35]. It was considered that EBAC measurements can evaluate local electrical properties of graphene with nanoscale spatial resolution of materials during material characterization.…”

Section: Introductionmentioning

confidence: 99%

Electrical resistivity mapping of potassium-doped few-layer CVD graphene by EBAC measurements

Okigawa,

Nakajima,

Okazaki

et al. 2023

J. Phys. D: Appl. Phys.

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The electron beam absorbed current (EBAC) method identifies the open and/or short points in various semiconductor devices, which can be applied to characterize the current path and local resistance in graphene. In this study, potassium (K)-doped few-layer graphene with inhomogeneous K atoms seemed to be one of the appropriate materials to characterize the current path by EBAC. Nonuniform contrast in the EBAC image due to inhomogeneous local resistances is observed, which is explained by the variation of the Fermi level in the graphene channel from the G-band peak shifts from Raman spectroscopy. The changes in the contrast of the EBAC images are obtained by applying a gate voltage. These changes are attributed to the modulation of the local carrier densities by applying the gate voltage. For comparison, uniform contrast in EBAC images and uniform G-band peak positions of undoped few-layer graphene field effect transistors are confirmed. The obtained results suggest that homogeneous Fermi level leads to a uniform current path. EBAC enables us to evaluate the uniformity of local resistance and current through a pass in the graphene channel, which can be applied to other two-dimensional materials, such as transition metal dichalcogenides, graphene oxide, and hexagonal boron nitride.

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Section: Introductionmentioning

confidence: 99%

Electrical resistivity mapping of potassium-doped few-layer CVD graphene by EBAC measurements

Okigawa,

Nakajima,

Okazaki

et al. 2023

J. Phys. D: Appl. Phys.

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“…The challenge is aggravated when metal voids that occurred in very-largescale-integration (VLSI) do not give rise to thermal emissions, hindering emission microscopy (EMMI) detection. Electron Beam Absorbed Current (EBAC) technique uses an electron beam as a probing element to achieve nano-meter scale resolution in this isolation of open failures in VLSI [1,2] based on the repulsion nature of the electron signal at the open spot. In this paper, we propose a combination of scan diagnosis and EBAC to locate open defects with faster turnaround and precision.…”

Section: Introductionmentioning

confidence: 99%

Root Cause Analysis and Correction of Single Metal Contact Open-Induced Scan Chain Failure in 90 nm Node VLSI

Ting

Liu²,

Chen

et al. 2017

International Symposium for Testing and Failure Analysis

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In this paper, the localization of open metal contact for 90nm node SOC is reported based on Electron Beam Absorbed Current (EBAC) technique and scan diagnosis for the first time. According to the detected excess carbon, silicon and oxygen signals obtained from X-ray energy dispersive spectroscopy (EDX), the failure was deemed to be caused by the incomplete removal of silicate photoresist polymer formed during the O2 plasma dry clean before copper plating. Based on this, we proposed to replace the dry clean with diluted HF clean prior to the copper plating, which can significantly remove the silicate polymers and increase the yield.

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The Application of Advanced Nano-Techniques in Failure Analysis for Different Failure Mechanism

Li¹,

Lan

Liu³

et al. 2018

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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The investigation of Active VC and EBAC analysis utilization on test structure

Cited by 7 publications

References 4 publications

Electrical resistivity mapping of potassium-doped few-layer CVD graphene by EBAC measurements

Electrical resistivity mapping of potassium-doped few-layer CVD graphene by EBAC measurements

Root Cause Analysis and Correction of Single Metal Contact Open-Induced Scan Chain Failure in 90 nm Node VLSI

The Application of Advanced Nano-Techniques in Failure Analysis for Different Failure Mechanism

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