The Investigation of Sn heavily doped ZnSe for promising intermediate band materials

Yin, Jianbo; Zhang, Xingxing

doi:10.1016/j.jpcs.2021.109951

Cited by 1 publication

(1 citation statement)

References 34 publications

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“…On the other hand, introduced an intermediary impurity in band gap (represented in fig. 1), there are two methods to produced the electron hole-pairs, the first one the electrons transmit from the valence-band (V.B) to the intermediary band, after then to the conduction-band (C.B); and the second way the electrons transmit straight from the (V.B) to (C.B), thus, its equivalent to the parallel link of three semi-conductors through various band-gaps, which would significantly increase a material's photo-absorption efficiency [11][12][13][14][15]. The Cupper (Cu) is among of the most interesting materials because it has electronic-shell structure and a similar ionic-radius of Zn 2+ , thus, thought to be more suitable for Zn 2+ ion replacement compared toward others [16].…”

Section: Introductionmentioning

confidence: 99%

Effect of Cu ratios dopant on ZnSe thin films structural and optical properties

Abdel-Salam,

Sabry,

Yousef

et al. 2023

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This study focused to prepare poly-crystalline (ZnSe)1-x Cux thin films, where x values vary from 0 to 0.1 %. the effect of Cu ratios dopant on structural, phases and optical properties has been investigated. As prepared thin films were deposited onto a cleaning glass substrate under high vacuum conditions (10-7 mbr) at room temperature using the “ evaporation technique”. The analysis results according to data of the X-ray diffraction technique of all films refer to the growth polycrystalline with hexagonal wurtzite structure of Zn-Se with no presence of any further phases. The changes in numerous parameters such as volume of the unit cell, atomic packing factor, dislocation density, lattice constant and bond length with the Cu ratio were estimated and described. As well, the crystallite sizes,D, the lattice micro-strain,ε and dislocation density,δ have been calculated the results evidence that the micro-structural parameters enhancement with increment Cu atoms. On the other hand, the optical parameters of the as-synthesized films (ZnSe)1-xCux (0 ≤ x ≤ 0.1) were performed utilizing “UV–V is spectro -photometer” with a wavelength range of 300 to 2400 nm. The results show that as the Cu ratio increases, the absorption edge shifts to a higher wavelength and the optical band gap, Eg opt decreases from 2.63 eV to 2.52 eV. Finally, the behaviour of the optical constant parameters as real,εr/ imaginary, εi parts, dissipation factor,tan δ, volume/surface energy loss functions and dispersion parameters were shown to depend on the variation of the Cu ratio and wavelengths.

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