The investigation of the acousto-photovoltaic effect in single crystals TlIn1−xGaxSe<sub>2</sub>

Gojayev, E. M.; Mamedova, G. N.; Osmanova, S. S.; Mehdiyeva, Sh. M.; Jabarov, S. H.

doi:10.1142/s0217979221500119

Cited by 4 publications

(1 citation statement)

References 16 publications

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“…Among the compounds of the above type, TlInSe2 occupies a special place. This compound has high tensoresistive properties [4], high photosensitivity [5], switching properties with memory [6][7][8][9], etc. The electrical and photoelectric properties of TlInSe2 single crystals were studied in [10,11,12].…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Tlinse2<Au> Single Crystals

G.N. Mammadova

2024

jes

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This paper presents the results of studying the surface microrelief in 2D and 3D models and analyzing the spectroscopy of a three-junction TlInSe2<Au> crystal. Analysis of the results obtained showed that with a change in the composition of the TlInSe2<Au> crystal, sharp changes occur in the microrelief of its surface. An X-ray optical diffraction analysis of the TlInSe2<Au> crystal was experimentally carried out. Based on ellipsometric data, optical functions were determined - the real and imaginary parts of the dielectric permittivity of crystals, the coefficients of optical absorption and reflection, the dependence of energy losses and electric field power on the effective density, the spectral dependences of the real (σr) and imaginary (σi) parts, optical electrical conductivity were experimentally studied. The fluorescence spectra of the ternary compound TlInSe2<Au> were isolated and analyzed when excited by light with a wavelength of 532 nm. X-ray studies of TlInSe2<Au> showed that this phase crystallizes into tetragonal systems. Ellipsometric measurements showed that the real (ε1) and imaginary (ε2) parts of the dielectric constant are components of the dielectric constant tensor of the uniaxial joints under consideration and do not depend on the angle. Analysis of the dependence of the real and imaginary parts of the refractive index of the TlInSe2<Au> crystal on photon energy showed that the nature of the change in the real and imaginary parts of the dielectric constant does not differ significantly. When analyzing the spectral dependences of the real (σr) and imaginary (σi) parts of the optical electrical conductivity, it was noticed that the real part of the optical electrical conductivity increases exponentially in the energy range 0.894-3.505 eV. In the energy range of 0.654-2.91 eV, the imaginary part of the optical electrical conductivity increases linearly, reaches a maximum value, and decreases at an energy of 2.91 eV. At 3.6 eV, an inversion of the imaginary part of the optical electrical conductivity of the TlInSe2<Au> compound is observed. From the graphs of the effective power density versus electric field energy losses, it is known that the effective power density increases significantly in the energy range of 0.805–3.52 eV. The fluorescence spectrum of the ternary compound TlInSe2<Au> upon excitation with light with a wavelength of 532 nm has been studied and it has been established that this phase has luminescent properties.

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Section: Introductionmentioning

confidence: 99%

Optical Properties of Tlinse2<Au> Single Crystals

G.N. Mammadova

2024

jes

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Tensoresistive properties of single crystals TlIn1−xGaxSe₂

Gojayev

Mammadova

2021

Int. J. Mod. Phys. B

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In this work, single crystals of TlIn[Formula: see text]Ga[Formula: see text]Se2 solid solutions were grown by the methods of zone recrystallization, technologies for the manufacture of strain gauges based on them were developed and the tensoresistive properties of these phases were studied, the coefficient of strain sensitivity was determined by the static method depending on the temperature, the magnitude of mechanical deformation and optical illumination. Revealing that the single crystals have a high strain sensitivity coefficient, by the variation of the composition, quantity of mechanical deformation and the optical illumination, it is possible to control the phase coefficients investigated tensosensitivity.

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Photoelectric properties of TlGaxIn1−xSe₂ (x = 0 − 1) single crystals

Gojayev

Mammadova

Rehimov

et al. 2022

Int. J. Mod. Phys. B

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This work presents the results of a study of the photoelectric properties of single crystals of the TlGa[Formula: see text]In[Formula: see text]Se2 system of solid solutions based on TlInSe2 with high photo and tensile sensitivity and switching properties with memory and TlGaSe2 with high photosensitivity in the visible and infrared regions of the spectrum. Single crystals of the above alloys were grown by the Bridgman–Stockbarger methods. Investigated alloys correspond in [Formula: see text], 0.1, 0.2, 0.3, 0.4, 0.7, 0.8, 0.9, 1 compounds. It was revealed that these alloys are photosensitive materials, and with a decrease in [Formula: see text] from 1 to 0, a shift of the spectral characteristic maxima from 0.57[Formula: see text][Formula: see text]m to 1.35[Formula: see text][Formula: see text]m is observed. The specific resistance at 77–300 K and the bandgap of the investigated phases have been determined. It was found that with an increase in the content of Ga in the composition of solid solutions, the bandgap increases from 1.23 eV to 2.15 eV.

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The investigation of the acousto-photovoltaic effect in single crystals TlIn1−xGaxSe₂

Cited by 4 publications

References 16 publications

Optical Properties of Tlinse2<Au> Single Crystals

Optical Properties of Tlinse2<Au> Single Crystals

Tensoresistive properties of single crystals TlIn1−xGaxSe₂

Photoelectric properties of TlGaxIn1−xSe₂ (x = 0 − 1) single crystals

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The investigation of the acousto-photovoltaic effect in single crystals TlIn1−xGaxSe2

Cited by 4 publications

References 16 publications

Optical Properties of Tlinse2<Au> Single Crystals

Optical Properties of Tlinse2<Au> Single Crystals

Tensoresistive properties of single crystals TlIn1−xGaxSe2

Photoelectric properties of TlGaxIn1−xSe2 (x = 0 − 1) single crystals

Contact Info

Product

Resources

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The investigation of the acousto-photovoltaic effect in single crystals TlIn1−xGaxSe₂

Tensoresistive properties of single crystals TlIn1−xGaxSe₂

Photoelectric properties of TlGaxIn1−xSe₂ (x = 0 − 1) single crystals