2018
DOI: 10.1016/j.materresbull.2017.08.055
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The investigation of the electrical transport properties of Gd doped YCrO 3 nanoparticles

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Cited by 21 publications
(4 citation statements)
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“…The Cr 3+ and Mn 3+ ions induce a spin disorder at oxygen ion which can reduce the broadening of oxygen p-orbitals and valance band edges of Cr 3+ and Mn 3+ ions, intimating a smaller band gap [24,56]. Furthermore, as we substitute Gd 3+ ions at Sm-site, the band gap energy increases up to 1.51 eV with increasing Gd concentration which can be attributed to the creation of mid gap states as reported in Y 1-x Gd x CrO 3 nanoparticles [57]. The other reason for the increase in band-gap with Gd-doping is understood in terms of the decrease in R avg and the corresponding increase in tilt angles.…”
Section: Mmentioning
confidence: 78%
“…The Cr 3+ and Mn 3+ ions induce a spin disorder at oxygen ion which can reduce the broadening of oxygen p-orbitals and valance band edges of Cr 3+ and Mn 3+ ions, intimating a smaller band gap [24,56]. Furthermore, as we substitute Gd 3+ ions at Sm-site, the band gap energy increases up to 1.51 eV with increasing Gd concentration which can be attributed to the creation of mid gap states as reported in Y 1-x Gd x CrO 3 nanoparticles [57]. The other reason for the increase in band-gap with Gd-doping is understood in terms of the decrease in R avg and the corresponding increase in tilt angles.…”
Section: Mmentioning
confidence: 78%
“…The time for relaxation decreases as temperature increases. The dc and the ac activation energies increase as the Gd-doping concentration increases [262].…”
Section: Chemical-pressure Dependencementioning
confidence: 96%
“…(10) Y 1−x Gd x CrO 3 . Gd-doped Y 1−x Gd x CrO 3 (x = 0.0, 0.01, 0.05, and 0.10) nano-materials were prepared by Sinha et al following the sol-gel method [262]. The transport property was investigated in a temperature regime of 298-523 K. The free-charge conductivity and the space-charge conductivity increase as a function of temperature.…”
Section: Chemical-pressure Dependencementioning
confidence: 99%
“…In particular, nowadays experimental results have been shown that the embodiment of rare-earth metals such as Gd ion in broad band gap semiconductor. Gd 3+ ion is one of the greatest interest due to its application in scintillation and optical devices in the place of other luminescent and large magnetic behaviour materials [20][21][22]. The SnO2-CuO nanoparticles having a subject of must importance because of its outstanding physical and chemical properties and a workable future dielectric material for no of functional devices.…”
Section: Introductionmentioning
confidence: 99%