The ion implantation of helium into gold. A combined X-ray reflection spectroscopy and Rutherford backscattering study

Abstract

Two methods are used to investigate the very near surface (0 to 10 nm) effect of 3 keV helium implantation into evaporated gold films. X‐ray reflection spectroscopy is used to determine the change in density of theimplanted layer and Rutherford backscattering to determine helium concentrations; a maximum of 3.3 He atoms per metal vacancy is reported for a fluence of 4.0 × × 1016 atoms cm−2. The data support the proposition that for implant conditions below those required for exfoliation, there are helium pressures well in excess of 100 kbar within implantation induced voids.