The ion photon emission microscope on SNL’s nuclear microprobe and in LBNL’s cyclotron facility

Branson, Janelle V.; Doyle, B.L.; Vizkelethy, György; Rossi, Paolo; Knapp, J. A.; McMahan, M. A.

doi:10.1016/j.nimb.2009.03.072

Cited by 7 publications

(8 citation statements)

References 7 publications

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“…In contrast with our data, it is reported that the spatial resolution of about 5 μm has been achieved by using YAG:Ce [7]. In the case of n-type Gallium Nitride (n-GaN), the spatial resolution of about 2.5 μm has been demonstrated [6]. Therefore, we suggest that a diamond containing NV centers is a rival candidate of YAG:Ce and n-GaN in spatial resolution.…”

Section: Samplescontrasting

confidence: 99%

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Diamonds Utilized in the Development of Single Ion Detector with High Spatial Resolution

Onoda

Yamamoto

Ohshima

et al. 2012

Trans. Mat. Res. Soc. Japan

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We are developing the Ion Photon Emission Microscopy (IPEM) system at JAEA. To observe a map by IPEM, the position where an ion strikes a scintillator placed over a microelectronics circuit is recorded together with the ion induced event. Since the spatial resolution is determined by the spot size of the Ion Beam Induced Luminescence (IBIL), the scintillator is one of the most important parts of IPEM. In this study we propose that a diamond containing a high concentration of Nitrogen Vacancy (NV) centers can be used as a scintillator with high spatial resolution. For both Y 3 Al 5 O 12 :Ce (YAG:Ce) and the diamond containing NV centers, the minimum spot size is a few micrometers. The IBIL intensity from the diamond containing NV centers is higher than that from YAG:Ce. According to these results, we suggest that a diamond containing NV centers is a rival candidate of a YAG:Ce from the point of view of single ion detection with high spatial resolution.

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Section: Samplescontrasting

confidence: 99%

“…A different way to perform mapping has been proposed by SNL and known as the Ion Photon Emission Microscopy (IPEM) [5][6][7]. To observe the map, it is not necessary to focus the beam at all.…”

Section: Introduction 11 Ion Photon Emission Microscopymentioning

confidence: 99%

Diamonds Utilized in the Development of Single Ion Detector with High Spatial Resolution

Onoda

Yamamoto

Ohshima

et al. 2012

Trans. Mat. Res. Soc. Japan

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“…The light when dealing with scintillating films is often either more commonly produced at the defects present including cracks and edges or undergoing significant internal reflection to be emitted at these cracks or edges. Similar results for IPEM images of ICs can be seen elsewhere (4,5). The resolution of IPEM images was found to be a result of both the optics system and the extent of blooming associated with the various forms of scintillating materials.…”

Section: Ipem Statussupporting

confidence: 81%

“…To overcome this limitation, the ion photon emission microscope was designed to image the location of an ion strike from a broad beam high-energy heavy-ion exposure, as can be obtained at cyclotrons, and associate it with possible alterations in the circuit elements. The microscope has developed from an initial proof-of-concept table-top version based on a polonium-210 alpha particle source through in vacuo Tandem based microscopes to the current ex vacuo version present at Lawrence Berkeley National Laboratory (LBNL) (4)(5)(6). Several challenges have had to be addressed, as the concept was applied to ionizing radiation with greater energies and resulting penetration depth.…”

Section: Radiation Effects Microscopymentioning

confidence: 99%

Imaging penetrating radiation through ion photon emission microscopy

et al. 2010

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The ion photon emission microscope (IPEM), a new radiation effects microscope for the imaging of single event effects from penetrating radiation, is being developed at Sandia National Laboratories and implemented on the 88" cyclotron at Lawrence Berkeley National Laboratories. The microscope is designed to permit the direct correlation between the locations of high-energy heavy-ion strikes and single event effects in microelectronic devices. The development of this microscope has required the production of a robust optical system that is compatible with the ion beam lines, design and assembly of a fast single photon sensitive measurement system to provide the necessary coincidence, and the development and testing of many scintillating films. A wide range of scintillating material for application to the ion photon emission microscope has been tested with few meeting the stringent radiation hardness, intensity, and photon lifetime requirements. The initial results of these luminescence studies and the current operation of the ion photon emission microscope will be presented. Finally, the planned development for future microscopes and ion luminescence testing chambers will be discussed. *khattar@sandia.gov; phone 1 505 845-9859; fax 1 505 844-7775; http://www.sandia.gov/pcnsc/departments/radsolid.html

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“…We validated the coincidence requirements for the IPEM concept with a table-top model-see Figure 1(A)-but this only provided a proof of concept. 2,3 We subsequently conceived the micro-one IPEM and built it on an end station of the SNL tandem accelerator: see Figure 1(B). Unfortunately, sufficiently high ion energies were not available to penetrate modern IC overlayers.…”

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confidence: 99%