The isothermal annealing of boron implanted silicon

Seidel, Thomas E.; Rae, A. U. Mac

doi:10.1080/00337577108232558

Cited by 52 publications

(18 citation statements)

References 9 publications

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“…Figure 4 indicates that such a time difference is insufficient to significantly impact the activation of boron atoms at this temperature. [37][38][39][40] Hence the presence of higher surface boron concentrations cannot be the reason for the higher surface acceptor concentration observed for thicker films. Given the similar concentrations of boron and Al in the thinner and thicker films, it is clear that the source of increased acceptor doping lies elsewhere.…”

Section: Conductance Spectroscopy Measurements Of Aln/si Interfacesmentioning

confidence: 99%

Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces

Chandrasekar

Bhat

Muralidharan

et al. 2017

Sci Rep

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The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to switching losses and lower breakdown voltages. The physical nature of such a parasitic channel and its properties are however, not well understood. We report on a pronounced thickness dependence of the parasitic channel formation at AlN/Si interfaces due to increased surface acceptor densities at the interface in silicon. The origin of these surface acceptors is analyzed using secondary ion mass spectroscopy measurements and traced to thermal acceptor formation due to Si-O-N complexes. Low-temperature (5 K) magneto-resistance (MR) data reveals a transition from positive to negative MR with increasing AlN film thickness indicating the presence of an inversion layer of electrons which also contributes to parasitic channel formation but whose contribution is secondary at room temperatures.

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Section: Conductance Spectroscopy Measurements Of Aln/si Interfacesmentioning

confidence: 99%

Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces

Chandrasekar

Bhat

Muralidharan

et al. 2017

Sci Rep

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“…However, implanted ions generate a large concentration of defects that deteriorate the device performance, 1 and implanted dopants are generally electrically inactive. 2,3 Postimplant thermal annealing is required to anneal out the damage and to electrically activate the dopant. Boron is the most common dopant used for the formation of p-type regions because of its high solubility in Si.…”

Section: Introductionmentioning

confidence: 99%

“…The interaction between boron and silicon interstitials produced by the implant complicates the formation of ultrashallow lowresistivity junctions, due to transient enhanced diffusion ͑TED͒ and B cluster formation. 2,3 The dissolution of B clusters requires an elevated thermal budget but the process is accompanied by significant B diffusion. Generally, shorttime high-temperature anneals are preferred because of the better trade-off between activation and diffusion.…”

Section: Introductionmentioning

confidence: 99%

Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

Aboy

Pelaz

Marqués

et al. 2005

Journal of Applied Physics

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We use kinetic nonlattice Monte Carlo atomistic simulations to investigate the physical mechanisms for boron cluster formation and dissolution in complementary metal-oxide semiconductor ͑MOS͒ processing, and the role of Si interstitials in the different processes. For this purpose, B implants in crystalline Si as well as B implants in preamorphized Si are analyzed. For subamorphizing B implants, a high concentration of Si interstitials overlaps with the B profile and this causes a very quick B deactivation for both low-and high-dose B implants. For B implants in preamorphized silicon, B is activated during the regrowth of the amorphous layer if the B concentration is lower than 10 20 cm −3 and remains active upon annealing. However, if B concentrations higher than 10 20 cm −3 are present, as occurs in the formation of extensions in p-channel MOS transistors, B atoms are not completely activated during the regrowth. Moreover, the injection of Si interstitials from the end-of-range defects leads to additional B deactivation in the regrown layer during subsequent annealing. If the end-of-range defects overlap with a B profile, even of relatively low concentration, as it occurs for B pockets in n-channel MOS transistors, very quick and local B deactivation occurs in the high Si-interstitial concentration region.

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“…This recovery was caused by thermal energy only. As mentioned above, it is known that the decrease in sheet resistance at high temperature (above 600 • C) is produced by B substitution [23]. This phenomenon requires higher thermal energy than the recovery of crystallinity.…”

Section: Discussionmentioning

confidence: 97%

“…6 (b). For furnace annealing below 500 • C, the sheet resistance was reduced by the recovery of crystallinity [23]. This recovery was caused by thermal energy only.…”

Section: Discussionmentioning

confidence: 99%

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation

Heya

Matsuo

Kanda

2016

IEICE Trans. Electron.

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A novel activation method for a B dopant implanted in a Si substrate using a soft X-ray undulator was examined. As the photon energy of the irradiated soft X-ray approached the energy of the core level of Si 2p, the activation ratio increased. The effect of soft X-ray irradiation on B activation was remarkable at temperatures lower than 400 • C. The activation energy of B activation by soft X-ray irradiation (0.06 eV) was lower than that of B activation by furnace annealing (0.18 eV). The activation of the B dopant by soft X-ray irradiation occurs at low temperature, although the activation ratio shows small values of 6.2×10 −3 at 110 • C. The activation by soft X-ray is caused not only by thermal effects, but also electron excitation and atomic movement.

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The isothermal annealing of boron implanted silicon

Cited by 52 publications

References 9 publications

Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces

Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces

Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation

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