The kinetics of grain growth in nanocrystalline copper

Ganapathi, S. Kailasa; Owen, David M.; Chokshi, Atul H.

doi:10.1016/0956-716x(91)90142-n

Cited by 83 publications

(34 citation statements)

References 19 publications

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“…The activation energy of Cu was calculated to be 33 kJ/mol, significantly less than the reported activation energy for grain growth in microcrystalline copper of 80 to 100 kJ/mol. [8,9] Similar activation energies (30 ± 9 kJ/mol) for grain growth in fully dense NC Cu were reported by Ganpathi et al [10] Natter et al [11] demonstrated that the low activation energy for grain growth in NC materials is attributed to the low activation energy for diffusion of atoms along the grain boundaries. Interestingly, Haslam et al [12] used MD simulations to study grain growth in NC Pd and observed grain rotation and coalescence as additional mechanisms that contributed to grain growth.…”

Section: Introductionsupporting

confidence: 67%

Molecular Dynamics Simulations of Dislocation Activity in Single-Crystal and Nanocrystalline Copper Doped with Antimony

Rajgarhia

Spearot

Saxena

2010

Metall Mater Trans A

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Recent experimental and simulation results have indicated that high-temperature grain growth in nanocrystalline (NC) materials can be suppressed by introducing dopant atoms at the grain boundaries. However, the influence of grain boundary dopants on the mechanical behavior of stabilized NC materials is less clear. In this work, molecular dynamics (MD) simulations are used to study the impact of very low dopant concentrations (<1.0 at. pct Sb) on plastic deformation in single-crystal and NC Cu. A new interatomic potential for low Sb concentration Cu-Sb solid-solution alloys is used to model dopant/host and dopant/dopant interatomic interactions within the MD framework. In single-crystal models, the strained regions around the Sb atoms act as heterogeneous sources for partial dislocation nucleation; the stress associated with this process decreases with increasing Sb concentration. In NC models, MD simulations indicate that Sb dopants randomly dispersed at the grain boundaries cause an increase in the flow stress in NC Cu, implying that Sb atoms at the grain boundaries retard both grain boundary sliding and dislocation nucleation from grain boundary regions.

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Section: Introductionsupporting

confidence: 67%

Molecular Dynamics Simulations of Dislocation Activity in Single-Crystal and Nanocrystalline Copper Doped with Antimony

Rajgarhia

Spearot

Saxena

2010

Metall Mater Trans A

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“…Horvath et al reported remarkable resistance to grain growth of Cu, when heated to 498 K (225°C). [20] A detailed study carried out by Ganapathy et al [21] indicates that nanocrystalline Cu does undergo extensive grain growth when heated to 673 K (400°C). Our results also suggest similar grain growth characteristics at a sintering temperature of above 673 K (400°C).…”

Section: Discussionmentioning

confidence: 98%

Spark Plasma Sintering of Nanocrystalline Cu and Cu-10 Wt Pct Pb Alloy

Sharma

Biswas

Basu

et al. 2011

Metall Mater Trans A

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“…The grain boundaries have an excess of energy and the minimization of energy drives the process of grain growth. The increase of temperature increases the boundary mobility and thus facilitates the grain growth [32,33]. The other layers did not reveal any grain growth, which also shows its good thermal stability.…”

Section: Oxidation Resistance and Thermal Stabilitymentioning

confidence: 89%

Solar selective absorbers based on Al2O3:W cermets and AlSiN/AlSiON layers

Rebouta

Sousa

Capela

et al. 2015

Solar Energy Materials and Solar Cells

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a b s t r a c tSolar selective coatings based on double Al 2 O 3 :W cermet layers and AlSiN/AlSiON bilayer structures were prepared by magnetron sputtering. Both were deposited on stainless steel substrates using a metallic tungsten (W) layer as back reflector. The coating stacks were completed by an antireflection (AR) layer composed of Al 2 O 3 , SiO 2 , or AlSiO x . Spectrophotometer measurements, X-Ray diffraction, Scanning electron microscopy, Energy Dispersive X-Ray Spectroscopy and Rutherford Backscattering Spectrometry were used to characterize the optical properties, crystalline structure, morphology and composition of these coatings. The spectral optical constants of the single layers were calculated from the reflectance and transmittance measurements and used to design the optical stack. The coatings exhibit a solar absorptance of 93-95% and an emissivity of 7-10% (at 400 1C). The coatings also exhibit excellent thermal stability, with small changes in the optical properties of the coating during heattreatments at 400 1C in air for 2500 h and at 580 1C in vacuum for 850 h. The coating based on the AlSiN/ AlSiON bilayer structure was obtained with an Al:Si ratio of 2.5:1. These coatings revealed similar performance as the one obtained with coatings based on Al 2 O 3 :W cermet layers.

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The kinetics of grain growth in nanocrystalline copper

Cited by 83 publications

References 19 publications

Molecular Dynamics Simulations of Dislocation Activity in Single-Crystal and Nanocrystalline Copper Doped with Antimony

Molecular Dynamics Simulations of Dislocation Activity in Single-Crystal and Nanocrystalline Copper Doped with Antimony

Spark Plasma Sintering of Nanocrystalline Cu and Cu-10 Wt Pct Pb Alloy

Solar selective absorbers based on Al2O3:W cermets and AlSiN/AlSiON layers

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