The Kurtz-Perry powder technique revisited: A case study on the importance of reference quality and broadband nonlinear optical measurements using LiInSe2

Clark, Daniel J.; Zhang, Jian‐Han; Craig, Andrew J.; Weiland, Ashley; Brant, Jacilynn A.; Cho, Jeong Bin; Kim, Yong Soo; Jang, Joon I.; Aitken, Jennifer A.

doi:10.1016/j.jallcom.2022.165381

Cited by 18 publications

(20 citation statements)

References 159 publications

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“…Using χ (2) = 66 pm/V for AGSe, our calculation yields excellent χ (2) values of 35 ± 3.5 pm/V for Li 4 CdSn 2 S 7 and 14.8 ± 1.5 pm/V for Li 2 CdSiS 4 . It should be noted that we previously confirmed that optical-quality AGS (obtained from Gooch & Housego) and AGSe yielded consistent SHG in the mid-IR (including 3100 nm) in accordance with their known χ (2) values …”

Section: Resultssupporting

confidence: 82%

“…We confirmed that Li 4 CdSn 2 S 7 and Li 2 CdSiS 4 do not exhibit any PL under 2PA, implying that the relaxation pathways of optical excitation are basically nonradiative. The identical, outstanding LIDTs of Li 4 CdSn 2 S 7 and Li 2 CdSiS 4 are at least 12.5× AGSe, 8.3× AGS, and 2.5× LISe measured under identical irradiation conditions.…”

Section: Resultsmentioning

confidence: 79%

“…It should be noted that we previously confirmed that optical-quality AGS (obtained from Gooch & Housego) and AGSe yielded consistent SHG in the mid-IR (including 3100 nm) in accordance with their known χ (2) values. 61 Although Li 2 CdSiS 4 has an SHG response that is less than half of that measured for Li 4 CdSn 2 S 7 , it rivals some of the commercially available lithium sulfides, for example, LIS, which has reported χ (2) values between 6.8 and 15 pm/V, 72,73 depending on crystal quality. 74 It should be noted that Li 2 CdSiS 4 was reported by Li et al to have an SHG response equivalent to AGS, but this was at 2.09 μm (not the static limit) with a reference of unknown quality.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…The SHG response of Li 4 CdSn 2 S 7 is greater than that of the commercialized LISe, which has a similar bandgap. The LIDT of the title compound is ≥2.5× that of LISe . Furthermore, while Li 4 CdSn 2 S 7 is on par with the commercialized AGS in terms of χ (2) , its LIDT is >8.3× AGS .…”

Section: Introductionmentioning

confidence: 93%

“…The LIDT of the title compound is ≥2.5× that of LISe. 61 Furthermore, while Li 4 CdSn 2 S 7 is on par with the commercialized AGS in terms of χ (2) , its LIDT is >8.3× AGS. 47 Clearly, Li 4 CdSn 2 S 7 has an excellent balance of χ (2) and LIDT.…”

Section: ■ Introductionmentioning

confidence: 94%

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Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li₄CdSn₂S₇

et al. 2020

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The novel diamond-like Li4CdSn2S7 possesses many outstanding attributes that enable it to be a new, well-rounded front-runner among infrared (IR) nonlinear-optical materials, especially for high-intensity laser applications. Distortions of the metal–sulfur tetrahedra in accordance with Pauling’s second rule give rise to a significant net dipole moment, resulting in a strong second-order nonlinear optical susceptibility (χ(2)) of 35.0 ± 3.5 pm/V. Li4CdSn2S7 possesses an optical bandgap of 2.59 eV and an exceptional laser-induced damage threshold of >2.5 GW/cm2, which is more than 12.5 times greater than that of AgGaSe2 measured under identical irradiation conditions. Li4CdSn2S7 possesses a melting point of ∼780 °C and phase-matchability. All data indicate that Li4CdSn2S7 will outperform AgGaS2 and AgGaSe2 in difference frequency generation schemes for the generation of mid-IR radiation. New information on the recently reported Li2CdSiS4, which Li4CdSn2S7 also outperforms, is additionally included.

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Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 79%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 93%

Section: ■ Introductionmentioning

confidence: 94%

See 3 more Smart Citations

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li₄CdSn₂S₇

et al. 2020

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Unraveling the Deep‐Level Defects Induced Optical Losses in LilnSe₂ Crystal toward Enhancement of Mid‐Infrared Laser Radiation

Wang,

Ma,

et al. 2024

Laser & Photonics Reviews

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Mid‐infrared (MIR) lasers generated by nonlinear optical (NLO) crystals have aroused extensive attention in various military and civilian applications. Among the MIR NLO crystal family, LiInSe2 (LISe) is a promising candidate in the generation of MIR lasers due to its wide transmission range, large bandgap, and high laser‐induced damage threshold. However, the intrinsic defects in LISe induce optical losses, which will induce laser damage and hinder the performance of MIR laser generation. In this work, the mechanism of optical absorption induced by defects is revealed in LISe through transient absorption (TA) spectroscopy. It is verified that the deep‐level defects in LISe give rise to the extra optical absorption, which is owing to the excited state absorption (ESA) and photo‐induced absorption (PIA). Accordingly, for improving the optical properties of LISe crystals, Li2Se vapor‐mediated annealing to reduce defects concentration is rationally designed. The results confirmed that the optical properties of annealed LISe are improved due to the decrease of defects concentration. Ultimately, the performance of MIR laser generation is successfully enhanced by using the annealed LISe crystal. This work provides deep insights into the defect‐induced absorption losses in LISe crystals and promotes the application of LISe crystals in MIR laser generation.

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SbO(OH)₂(IO₃): The First Polar Sb⁵⁺‐Iodate with a Strong Second‐Harmonic Generation Response and a Wide Bandgap

Ji,

Li,

et al. 2024

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Widening the bandgaps while maintaining a strong second harmonic generation response has always been a research hotspot in the field of nonlinear optical iodate materials. A strategy involving covalent bonding is proposed that leverages the high valent later main group cation to construct iodates with predominantly covalent interactions. By using BiO(IO3) as a template, the first Sb5+‐containing polar iodate, SbO(OH)2(IO3) is successfully isolated. The introduction of the two hydroxide anions led to the reduction of layered BiO(IO3) into 1D SbO(OH)2(IO3) in which two corner‐sharing SbO4(OH)2 octahedra are further bridged by an iodate group. The covalently bonded [SbO(OH)2]+ chains and the optimal packing fashion of the asymmetric IO3− groups generate a very strong second harmonic generation signal of 14 times that of KH2PO4. Furthermore, SbO(OH)2(IO3) exhibits a wide bandgap of 4.14 eV and a high laser induced damage threshold [27.9 × AgGaS2, 0.2 × KH2PO4 (10 ns, 10 Hz)].

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The Kurtz-Perry powder technique revisited: A case study on the importance of reference quality and broadband nonlinear optical measurements using LiInSe2

Cited by 18 publications

References 159 publications

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li₄CdSn₂S₇

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li₄CdSn₂S₇

Unraveling the Deep‐Level Defects Induced Optical Losses in LilnSe₂ Crystal toward Enhancement of Mid‐Infrared Laser Radiation

SbO(OH)₂(IO₃): The First Polar Sb⁵⁺‐Iodate with a Strong Second‐Harmonic Generation Response and a Wide Bandgap

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The Kurtz-Perry powder technique revisited: A case study on the importance of reference quality and broadband nonlinear optical measurements using LiInSe2

Cited by 18 publications

References 159 publications

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li4CdSn2S7

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li4CdSn2S7

Unraveling the Deep‐Level Defects Induced Optical Losses in LilnSe2 Crystal toward Enhancement of Mid‐Infrared Laser Radiation

SbO(OH)2(IO3): The First Polar Sb5+‐Iodate with a Strong Second‐Harmonic Generation Response and a Wide Bandgap

Contact Info

Product

Resources

About

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li₄CdSn₂S₇

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li₄CdSn₂S₇

Unraveling the Deep‐Level Defects Induced Optical Losses in LilnSe₂ Crystal toward Enhancement of Mid‐Infrared Laser Radiation

SbO(OH)₂(IO₃): The First Polar Sb⁵⁺‐Iodate with a Strong Second‐Harmonic Generation Response and a Wide Bandgap