The Light Fantastic: Materials and Processing Technologies for Photonics

Buckley, D. H.

doi:10.1149/2.f04921if

Cited by 2 publications

(5 citation statements)

References 7 publications

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“…Thus, there was enormous impetus for the development of compound semiconductor technology. 16 Epitaxial crystal growth is a most important part of compound semiconductor technology. Liquid phase epitaxy was one of the earliest epitaxial growth techniques but it had several disadvantages which were overcome by the use of vapor phase and beam epitaxial growth techniques.…”

Section: Compound Semiconductor Science and Technologymentioning

confidence: 99%

“…Although metal-organic chemical vapour deposition (MOCVD) eventually became the vapor phase technique of choice, Chloride vapour phase epitaxy (VPE) and Hydride VPE were initially used for epitaxy of III-V semiconductors. [7][8][9][10][11][12][13][14][15][16][17]68 Molecular beam epitaxy (MBE) was developed by Al Cho in 1970 and provides an extremely useful technique for the growth of very thin layers. 16…”

Section: Compound Semiconductor Science and Technologymentioning

confidence: 99%

“…[7][8][9][10][11][12][13][14][15][16][17]68 Molecular beam epitaxy (MBE) was developed by Al Cho in 1970 and provides an extremely useful technique for the growth of very thin layers. 16…”

Section: Compound Semiconductor Science and Technologymentioning

confidence: 99%

“…My PhD research with the late L. D. (Declan) Burke began in 1971 and I discuss a few examples of our work on oxygen electrochemistry on ruthenium and iridium from that era. [2][3][4][5][6] This is followed by some examples of research on lithium batteries and compound semiconductors at Bell Laboratories [7][8][9][10][11][12][13][14][15][16][17][18] beginning in 1979. I then discuss some of our work at the University of Limerick on electrochemical etching and nanopore formation on III-V semiconductors, [19][20][21][22][23][24][25][26][27][28][29][30] a particularly appropriate topic for this presentation in view of Professor Gerischer's 31 extensive pioneering contributions to semiconductor electrochemistry.…”

Section: Introductionmentioning

confidence: 99%

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(Europe Section Heinz Gerischer Award) The Long Reach of Electrochemistry: Semiconductors, Metallization and Energy Storage

Buckley¹

2022

ECS Trans.

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Research in several different areas over the past half-century is briefly reviewed with some discussion on the evolution of equipment and techniques. Examples from our work on oxygen evolution on ruthenium and iridium and electrochromism in anodic iridium oxides in the 1970s and on lithium batteries in the 1980s are discussed. Topics in the science and technology of compound semiconductors range from epitaxial crystal growth to electrochemistry and nanopore formation. Some results are presented on electrodeposition of copper metallization including in-situ stress measurements and atomic force microscopy during deposition, and spontaneous morphology changes during room-temperature aging. Electrochemical kinetics of vanadium redox reactions on carbon electrodes is discussed as well as state-of-charge monitoring and thermal stability of the positive electrode in vanadium flow batteries.

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Section: Compound Semiconductor Science and Technologymentioning

confidence: 99%

Section: Compound Semiconductor Science and Technologymentioning

confidence: 99%

“…[7][8][9][10][11][12][13][14][15][16][17]68 Molecular beam epitaxy (MBE) was developed by Al Cho in 1970 and provides an extremely useful technique for the growth of very thin layers. 16…”

Section: Compound Semiconductor Science and Technologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

(Europe Section Heinz Gerischer Award) The Long Reach of Electrochemistry: Semiconductors, Metallization and Energy Storage

Buckley¹

2022

ECS Trans.

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“…There are many different designs of MOCVD reactor. The essential features of the technique are shown schematically 11 in Fig. 2.…”

Section: Vapor Phase Epitaxymentioning

confidence: 99%

(Electronics and Photonics Division Award Address) Compound Semiconductor Science and Technology: A Retrospective

Buckley

2017

ECS Trans.

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From the earliest days, there has been interest in GaAs and other compound semiconductors due to higher electron mobility than silicon and suitability for optical applications. It was shown in 1962 that semiconductors such as silicon are not suitable for lasers and compound semiconductors were suggested. In the fall of 1962, several groups demonstrated semiconductor lasers under pulsed conditions at 77 K and double heterostructure (DH) laser diodes were achieved in 1970. Coinciding with major advances in fiber optics technology, this provided an enormous impetus for the development of compound semiconductor technology. Epitaxial crystal growth is a most important part of the technology. Liquid phase epitaxy was initially used but was replaced by vapor-phase and molecular beam epitaxy. MOCVD eventually became the vapor-phase technique of choice. Following a breakthrough in GaN technology in the 1990s, the impact of GaN technology is enormous and GaN-based LEDs are rapidly becoming the lighting technology of choice.

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The Light Fantastic: Materials and Processing Technologies for Photonics

Abstract: Photonics may be defined as the generation, processing, and transmission of optical signals. A typical photonics system will involve a photon source (emitter), a transmission medium, and a detector. It may also involve devices for signal modulation and amplification.

Cited by 2 publications

References 7 publications

(Europe Section Heinz Gerischer Award) The Long Reach of Electrochemistry: Semiconductors, Metallization and Energy Storage

(Europe Section Heinz Gerischer Award) The Long Reach of Electrochemistry: Semiconductors, Metallization and Energy Storage

(Electronics and Photonics Division Award Address) Compound Semiconductor Science and Technology: A Retrospective

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