Bubble formation and growth on a water-splitting semiconductor photoelectrode under illumination with above-bandgap radiation provide a direct measurement of the gas-evolving reaction rate. Optical microscopy was used to record the bubble growth on single-crystal strontium titanate immersed in basic aqueous electrolyte and illuminated with UV light at 351/364 nm from a focused argon laser. By analyzing the bubble size as a function of time, the water-splitting reaction rate was determined for varying light intensities and was compared to photocurrent measurements. Bubble nucleation was explored on an illuminated flat surface, as well as the subsequent light scattering and electrode shielding due to the bubble. This technique allows a quantitative examination of the actual gas evolution rate during photoelectrochemical water splitting, independent of current measurements. © 2010 The Electrochemical Society. ͓DOI: 10.1149/1.3462997͔ All rights reserved. The production of hydrogen using solar energy to directly split water in a semiconductor photoelectrochemical cell is a promising source of carbon-free fuel, 1 but many issues with the semiconductor-liquid interface remain. Semiconductors with bandgaps ϳ2 eV useful for absorbing the solar flux and possessing the necessary potential to split water 2 often suffer stability issues due to photoexcited charge carriers corroding the semiconductor rather than transferring into the electrolyte.3 Adding heterogeneous catalysts or structuring the electrode surface can provide more active sites for charge transfer, lowering the overpotentials required and possibly increasing stability, but often the nature of the active sites is unknown.4-9 Traditional experimental techniques involve modifying or structuring the entire surface of a semiconductor photoelectrode and measuring the photocurrent under illumination; this method provides only the average reaction rate of all the various redox reactions occurring over the entire exposed surface. Localized methods that differentiate the activity on separate patterned areas on the same electrode could offer a wealth of information about the surface sites important for efficient charge transfer. Previous research has focused on utilizing a scanned electrochemical probe near the surface 10 that can even include local illumination through an optical fiber, 11 a very useful but rather perturbative and difficult method to implement.Examining the evolved gas bubbles could provide this type of local measurement by recording their growth rate at different surface features. Additionally, measuring the bubble and hence the actual gas produced differentiates between the gas-evolving reaction of interest and any parasitic corrosion reactions that can still contribute to the measured current. Optical microscopy of the photogenerated gas bubbles during their growth is a straightforward technique and provides a localized measurement of the reaction rate at various areas on a semiconductor surface.As a model system to explore the use of this technique...