The local electronic properties and formation process of titanium silicide nanostructures on Si(001)-(2 × 1)

Abstract

Titanium silicide island formation on an Si(001)-(2 × 1) surface was studied by means of scanning tunneling microscopy (STM) in situ at high temperature. Just after the start of annealing at 873 K, homogeneous nucleation occurs on the terrace, while preferential growth at the step edges was observed upon prolonged annealing. As the titanium silicide islands grow, multiple steps are formed nearby. The island size distribution was analyzed at several temperatures. Two types of TiSi2 structures, namely C49 and C54, were identified from the scanning tunneling spectroscopy (STS) spectra, in accordance with first-principles calculations. There was a critical island size for the transformation of C49–C54.

Microstructure and Local Density of States of Ruthenium Silicide on Si(001) Surface

“…Our study of titanium silicide formation on the same surface also showed formation of rectangular islands along the [110] and ½1 10 directions and formation of many steps near the islands. 13) There is another similarity of the terrace morphology to the case of Ti-deposited surface (data not shown). That is, during heating cycles, the growth proceeds via incorporation of Si removed from the terrace into the islands.…”

“…Ruthenium and its silicide are candidates for application in the next generation of electronic/magnetic devices 13) and as diffusion barriers at silicon surfaces. 4) Three epitaxial phases, Ru 2 Si 3 , RuSi and Ru 2 Si, were identified by means of cross-sectional transmission electron microscopy (TEM) analysis.…”

Titanium-induced charge of Si(001) surface dependent on local configuration

“…After heating to 600 • C or higher, clusters were formed on the terraces [18], and they were identified as TiSi 2 with scanning tunneling spectroscopy (STS) [19]. In Fig.…”

SPM Characterization of Titanium Disilicide Nanostructures Grown on a Ni-Modified Si(100) Substrate

“…The growth of TiSi 2 on silicon substrates, especially Si(111) and Si(100), had already been studied by STM and scanning tunneling spectroscopy (STS) methods, see e.g. [20,21]. The density of states for both phases had been calculated theoretically [21,22].…”

“…[20,21]. The density of states for both phases had been calculated theoretically [21,22]. However, there is no theoretical prediction of LDOS for finite silicide clusters or nanostructures.…”