The localization of unoccupied 3d states in oxidized Sc

Abstract

Inverse photoemission and 3p3d giant resonance excitation in electron energy loss spectroscopy in oxidized Sc are related to 2p + 3d x-ray absorption in SC~O,. The observations are shown to be cntLsistenf with 3d states being localired in both the presence and &he absence of a COR hole. Inverse photoemission reveals 3d crystal field splilting comparable to fhat found in 2p -, 3d excitations. while 3 p 3 d excitations show in addition strong hole-electmn exchange mupling.

Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

“…1͒ for sapphire. 12,13 The absence of such a difference between amorphous LaAlO 3 and LaScO 3 indicates that the CB edge energy position is mostly determined by the 5d states of La, while unoccupied 3d states of Sc, which constitute the bottom of the Sc 2 O 3 CB, 14 are likely to lie at a higher energy. To verify this supposition we analyzed the IPE/PC spectra of Sc 2 O 3 layers deposited by MBD presented in Fig.…”