The Low-Pressure Plasma Processing Environment

Mattox, Donald M.

doi:10.1016/b978-081551422-0.50005-x

Handbook of Physical Vapor Deposition (PVD) Processing 1998

DOI: 10.1016/b978-081551422-0.50005-x

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The Low-Pressure Plasma Processing Environment

Donald M. Mattox¹

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2011

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Cited by 2 publications

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Energetic deposition of carbon in a cathodic vacuum arc with a biased mesh

Moafi

Lau

Sadek

et al. 2011

Journal of Applied Physics

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Direct-current cathodic vacuum arc system with magnetic-field mechanism for plasma stabilization Rev. Sci. Instrum. 79, 073905 (2008); 10.1063/1.2949128Passivation layer on polyimide deposited by combined plasma immersion ion implantation and deposition and cathodic vacuum arc technique Graphite macroparticle filtering efficiency of three different magnetic filter designs used in the filtered cathodic vacuum arc deposition of tetrahedral amorphous carbon films Carbon films were deposited in a filtered cathodic vacuum arc with a bias potential applied to a conducting mesh mounted in the plasma stream between the source and the substrate. We determined the stress and microstructural properties of the resulting carbon films and compared the results with those obtained using direct substrate bias with no mesh. Since the relationship between deposition energy and the stress, sp 2 fraction and density of carbon are well known, measuring these film properties enabled us to investigate the effect of the mesh on the energy and composition of the depositing flux. When a mesh was used, the film stress showed a monotonic decrease for negative mesh bias voltages greater than 400V, even though the floating potential of the substrate did not vary. We explain this result by the neutralization of some ions when they are near to or passing through the negatively biased mesh. The microstructure of the films showed a change from amorphous to glassy carbonlike with increasing bias. Potential applications for this method include the deposition of carbon films with controlled stress on low conductivity substrates to form rectifying or ohmic contacts.

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Energetic deposition of carbon in a cathodic vacuum arc with a biased mesh

Moafi

Lau

Sadek

et al. 2011

Journal of Applied Physics

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Air-Based Deposition of Conductive Nitride Thin Films by Sputtering

Chan

2011

J. Electrochem. Soc.

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Conductive nitride films are conventionally prepared by reactive sputtering using nitrogen as a reactive gas. Replacing nitrogen with air as a reactive gas allows the process to be conducted at high base pressures, i.e., low vacuum, which can reduce substantially the processing time. In this study, TiN films were selected as a model system for the investigation. As the air/Ar flow ratio reached 0.10-0.15, the films revealed the characteristic rock-salt structured TiN. The N/Ti of the films was 0.80-0.83 with 9-13 atom % of oxygen. The determined resistivities and hardnesses of the films were in the range of 110-130 lX_cm and 26-27 GPa, respectively. All obtained data fulfill the characteristics of TiN films. Kinetic formation apparently prevails over thermodynamic predictions at low air/Ar ratios. In such plasma, the dissociation energy of nitrogen is much smaller than that of oxygen, leading to the high impingement rate of nitrogen. The dissolution of oxygen in the TiN films seems also to stabilize the nitride structure

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The Low-Pressure Plasma Processing Environment

Cited by 2 publications

References 74 publications

Energetic deposition of carbon in a cathodic vacuum arc with a biased mesh

Energetic deposition of carbon in a cathodic vacuum arc with a biased mesh

Air-Based Deposition of Conductive Nitride Thin Films by Sputtering

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