The Low‐Temperature Crystallization and Interface Characteristics of ZnInSnO/In Films Using a Bias‐Crystallization Mechanism

Abstract

This study presents a successful bias crystallization mechanism (BCM) based on an indium/glass substrate and applies it to fabrication of ZnInSnO (ZITO) transparent conductive oxide (TCO) films. The effects of bias-crystallization on electrical and structural properties of ZITO/In structure indicate that the current-induced Joule heating and interface diffusion were critical factors for low-temperature crystallization. With biases of 4 V and 0.1 A, the resistivity of the ZITO film was reduced from3.08×10−4 Ω∗cm to6.3×10−5 Ω∗cm. This reduction was attributed to the bias-induced energy, which caused indium atoms to diffuse into the ZITO matrix. This effectuated crystallizing the amorphous ZITO (a-ZITO) matrix at a lower temperature (approximately170∘C) for a short period (≤20 min) during a bias test. The low-temperature BCM developed for this study obtained an efficient conventional annealed treatment (higher temperature), possessed energy-saving and speed advantages, and can be considered a candidate for application in photoelectric industries.

Aluminium Wires Have the Free Air Balls (FABs): Electronic Flame-Off, Fracture Strength, Electrical Properties, and Bonding Characteristics of Nano Zn Film Al–Si Bonding Wires

“…The pull test of the first bond was performed with a test length of 50 mm, yielding a strain rate of 5 × 10 −3 s −1 . Moreover, to better understand the differences between the Al-0.5Si and ZAS wires, current tests of the first bond (FAB) were compared [12][13][14][15][16], and a bias tensile test of the wires with different currents was performed. The schematic diagram in Figure 2 shows that, for the current test, the effective wire length was 30 mm, and the applied DC voltage increased at 0.05 V/sec from 0 V until the wire fused.…”

Direct observation of leakage currents in a metal–insulator–metal capacitor using in situ transmission electron microscopy

“…In addition, because the thickness of the TEM specimen was thin for the transmission of electrons, we conducted experiments on the crystallization in a bulk state to examine the effects of size differences. A probe station (MSTECH, MST 4000A) was used to apply a voltage to the top Ru electrode in the form of a rounded shape via a mask pattern [23]. Then, XRD (Bruker, D8 Advance) was used to confirm the crystallization before and after the voltage application in the bulk state and compare it to the in situ TEM results.…”