The low-temperature electrical and magnetic properties of TaSe2 and NbSe2

Lee, H.N.S.; García, Manuel Bousoño; McKinzie, H.; Wold, A.

doi:10.1016/0022-4596(70)90013-7

Cited by 109 publications

(39 citation statements)

References 14 publications

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“…While in simple metals the Hall coefficient is essentially temperature independent, in unconventional materials it can exhibit strong variations with temperature. In particular, in the transition metal dichalcogenides, known as charge density wave (CDW) bearing compounds, the Hall coefficient changes sign from positive to negative soon after the transition into a CDW state [1,2]. A similar sign change of the Hall coefficient has recently been discovered in high temperature superconductors (HTSC) [3].…”

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confidence: 87%

Pseudogap-Driven Sign Reversal of the Hall Effect

et al. 2008

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We present a calculation of the Hall coefficient in 2H-TaSe(2) and 2H-Cu(0.2)NbS(2) based on their electronic structure extracted from angle-resolved photoemission spectra. The well-known semiclassical approach, based on the solution of the Boltzmann equation, yields the correct value for the normal-state Hall coefficient. Entering the charge density wave state results in the opening of the pseudogap and redistribution of the spectral weight. Accounting for this allows us to reproduce the temperature dependence of the Hall coefficient, including the prominent sign change, with no adjustable parameters.

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confidence: 87%

Pseudogap-Driven Sign Reversal of the Hall Effect

et al. 2008

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“…The discovery of magnetic anomalies associated with these distortions was made by Quinn, Simmons, and Banewicz 2 in their studies of 2#-TaSe 2 . Lee et al 3 4 showed that the magnetic and transport anomalies are not associated with magnetic ordering as originally suggested, 2 but most likely with subtle crystal distortions.…”

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confidence: 86%

“…3(a) is that the curve TAB corresponding to the transition between the two superfluid phases of liquid 3 He seems to intersect the solid transition line about 0.45 T, very near the field at which the solid changes behavior. It is unknown whether this is a coincidence or whether there exists a relationship between the AB transition in liquid 3 He and the magnetic phase transition in solid 3 He. We believe that the latter possibility is unlikely, although it should be remarked that the measured quantities relate to phenomena occurring at the liquid-solid interface and that the bulk solid is not in thermal equilibrium with the liquid.…”

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confidence: 99%

Pauling's Ionicity and Charge-Density Waves in Layered Transition-Metal Dichalcogenides

Thompson

1975

Phys. Rev. Lett.

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“…[19][20][21] The sign change in NNO can be similarly attributed to the Fermi surface reconstruction associated with the phase transition, leading to the opening of the Mott-Hubbard gap. The emergence of the gap combined with the complex multiband electronic structure of NNO, can result in coexistence of multiple carrier types near T MI .…”

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confidence: 99%

Field-effect diode based on electron-induced Mott transition in NdNiO₃

et al. 2012

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We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric conductivity with respect to the bias polarity. The asymmetry is temperature-dependent and is most significant near the metal-insulator transition. The I-V characteristics exhibit a strong dependence both on the thermal history and the history of the applied voltage bias. Our two-terminal device represents a simple and efficient route for studies of the effect of electron doping on the metal-insulator transition.The ability to electronically control the resistance of materials is the fundamental mechanism underlying the operation of modern semiconductor devices. In addition, a number of advanced materials and structures that exhibit controllable resistance switching phenomena are currently being explored as a basis for the future devices that will combine robust processibility, scalability, energy efficiency, and high speed. In strongly correlated oxide materials exhibiting a metal-insulator transition (MIT), phase transitions between states with different transport and magnetic properties [1-3] provide a fundamental mechanism for the operation of electronic devices with advanced functionalities. Such devices can be controlled by electric field,[4-6] optical excitation, [7] or a combination of thermal and electronic effects. [8,9] The electric field can not only modulate the charge density, but also shift the phase transition temperature, thus enhancing the direct effects of the electric field on the conductivity. The effects of electrical gating on the MIT have been demonstrated in La 0.8 Ca 0.2 MnO 3 films backgated through the substrate, and in NdNiO 3 (NNO) films gated through ionic liquids. [11][12][13][14][15] The electric fieldinduced variations of MIT temperature T MI resulted in a strong variation of the phase-dependent charge density.[17] These experiments provided a significant fundamental insight into the interplay between the charge carrier density and phase transitions in correlated oxides.Studies of electric field effects have so far focused on three-terminal field-effect transistor (FET) structures incorporating a gate electrode separated from the oxide film by an electrically insulating gate dielectric. However, these studies have been constrained by the difficulty of incorporating complex oxides into the standard threeterminal FET structure with a separate gate electrode. Here, we demonstrate a simple unipolar two-terminal device, a field-effect diode (FED), that enables studies of field effects in correlated oxides. The device is more straightforward than a FET both in terms of the fabrication and measurements. In our device geometry, the * Sergei.Urazhdin@emory.edu electric field is determined by the voltage applied between the two terminals. Thus, by measuring the dependence of the device conductivity on the applied voltage, one can determine the effects of the el...

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The low-temperature electrical and magnetic properties of TaSe2 and NbSe2

Cited by 109 publications

References 14 publications

Pseudogap-Driven Sign Reversal of the Hall Effect

Pseudogap-Driven Sign Reversal of the Hall Effect

Pauling's Ionicity and Charge-Density Waves in Layered Transition-Metal Dichalcogenides

Field-effect diode based on electron-induced Mott transition in NdNiO₃

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The low-temperature electrical and magnetic properties of TaSe2 and NbSe2

Cited by 109 publications

References 14 publications

Pseudogap-Driven Sign Reversal of the Hall Effect

Pseudogap-Driven Sign Reversal of the Hall Effect

Pauling's Ionicity and Charge-Density Waves in Layered Transition-Metal Dichalcogenides

Field-effect diode based on electron-induced Mott transition in NdNiO3

Contact Info

Product

Resources

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Field-effect diode based on electron-induced Mott transition in NdNiO₃