The low temperature photoluminescence in Zn3P2

Misiewicz, J.

doi:10.1002/pssa.2211070161

Phys. Stat. Sol. (a)

1988

DOI: 10.1002/pssa.2211070161

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The low temperature photoluminescence in Zn3P2

J. Misiewicz

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1992

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Defect-related transitions in Zn₃P₂studied by means of photovoltaic effect spectroscopy

Mirowska

Misiewicz

1992

Semicond. Sci. Technol.

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Transitions at energies of 1.31 eV and 1.41 eV have been observed in Zn, P, at room temperature (T = 295 K) by using surface photovoltage (SPY) spectroscopy. Results obtained from absorption and photoconductivity measurements are also discussed here. The polarity of the SPY signal h a s been analysed. Two acceptor levels were found to be at 0.29 eV and 0.19 eV above the valence band 'This paper was partly prepared under contract from the Ministry of National Education, and supported by Grant No 22338 9101 ( 2031127/1/1-9) from the Polish Research Committee.

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Defect-related transitions in Zn₃P₂studied by means of photovoltaic effect spectroscopy

Mirowska

Misiewicz

1992

Semicond. Sci. Technol.

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The low temperature photoluminescence in Zn3P2

Cited by 1 publication

References 7 publications

Defect-related transitions in Zn₃P₂studied by means of photovoltaic effect spectroscopy

Defect-related transitions in Zn₃P₂studied by means of photovoltaic effect spectroscopy

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The low temperature photoluminescence in Zn3P2

Cited by 1 publication

References 7 publications

Defect-related transitions in Zn3P2studied by means of photovoltaic effect spectroscopy

Defect-related transitions in Zn3P2studied by means of photovoltaic effect spectroscopy

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Defect-related transitions in Zn₃P₂studied by means of photovoltaic effect spectroscopy

Defect-related transitions in Zn₃P₂studied by means of photovoltaic effect spectroscopy