The Luminescence Mechanism and the Structure Defects of ZnO Thin Films

Abstract

ZnO will become a new pattern optoelectronic material because of its many excellent properties. But the defects in ZnO crystal are the key factors for restricting the luminescence properties of the material. In this paper, we summarized the defect types that exist in ZnO thin films and reviewed on the relationship between the luminescence mechanism and the structure defects of ZnO thin films reported in recent years.

Temperature dependence of the EPR signal in ZnO

“…A line with g ≈ 1.96 and a width of ∆Н ≤ 6 E occurs after heating the samples at temperature T ≥ 800 K in vacuum and is observed at T = 77 K. This line is intensified when the sample is irradiated with light with a quantum exceeding the band gap (Eg ≈ 3.435 eV) and weakens under the action of various gases adsorbed on the surface. Despite the large number of works [10][11][12] dedicated to elucidating the nature of this line, there is still no unambiguous model of the resonance source.…”