2014
DOI: 10.1007/s10854-014-1969-0
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The magnetic field effect on optical properties of Sm-doped GaN thin films

Abstract: We report the optical and magnetic properties of Sm doped wide-band-gap Gallium nitride (GaN) prepared by ion implantation. The photoluminescence (PL) intensity obviously increased as the increasing of annealing temperature from 700 to 1,100°C. Magnetic hysteresis was observed at room temperature. Our study was focusing on the influence of magnetic field on optical property of Sm 3? doped GaN. It was discovered that the PL intensity of Sm 3? increases remarkably under an external magnetic field. The mechanism … Show more

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Cited by 5 publications
(5 citation statements)
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“…158 This is an important consideration since, as previously discussed, most of the classical binary semiconductors have only tetragonal cation sites and their doping with Ln 3+ was achieved in their bulk form via highenergy/temperature techniques. [159][160][161] However, their nano counterparts often showed poor Ln 3+ sensitized emission 54,98 and the dopant was largely found on the surface of the nanocrystals rather than incorporated in the core. 88,98,162,163 AESs such as CaS and SrS are included in the figure, but often therein Ln 3+ sensitization relies on Ce 3+ -Ln 3+ co-doping.…”
Section: Additional Observations On the Designmentioning
confidence: 99%
See 1 more Smart Citation
“…158 This is an important consideration since, as previously discussed, most of the classical binary semiconductors have only tetragonal cation sites and their doping with Ln 3+ was achieved in their bulk form via highenergy/temperature techniques. [159][160][161] However, their nano counterparts often showed poor Ln 3+ sensitized emission 54,98 and the dopant was largely found on the surface of the nanocrystals rather than incorporated in the core. 88,98,162,163 AESs such as CaS and SrS are included in the figure, but often therein Ln 3+ sensitization relies on Ce 3+ -Ln 3+ co-doping.…”
Section: Additional Observations On the Designmentioning
confidence: 99%
“…In the case of α- and β-Ga 2 O 3 , the latter has both tetragonal and octahedral sites, while the former features only octahedral sites . This is an important consideration because, as previously discussed, most of the classical binary semiconductors have only tetragonal cation sites and their doping with Ln 3+ was achieved in their bulk form via high-energy/temperature techniques. However, their nano counterparts often showed poor Ln 3+ sensitized emission , and the dopant was largely found on the surface of the nanocrystals rather than incorporated in the core. ,,, …”
Section: Designing a Lanthanide-doped Semiconductor Nanocrystalmentioning
confidence: 99%
“…Let us comment that Pan Sun et al [37] have reported optical and magnetic properties of doped wide-band-gap GaN. They have shown that the photoluminescence (PL) intensity increased under an external magnetic field.…”
Section: Introductionmentioning
confidence: 99%
“…It is responding to these challenges by developing alternative semiconductor materials that can overcome the limitations of Si. [1][2][3][4][5] Lowdimensional nanostructures are attractive as a channel in future ultimately scaled transistors since their atomic scale thickness offers efficient electrostatic control, making them immune to short channel effects. 6,7 Graphene was known to have remarkable electrical and mechanical properties, 7 including high carrier mobility high thermal conductance, 8 and excellent stiffness.…”
Section: Introductionmentioning
confidence: 99%