The magnetic properties of GaAs parabolic quantum dot in the presence of donor impurity, magnetic and electric fields

Yaseen, Asmaa; Shaer, Ayham; Elsaid, Mohammad K.

doi:10.1016/j.cjph.2019.05.031

Cited by 16 publications

(3 citation statements)

References 42 publications

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“…The advancements in semiconductor technology have made it feasible to develop structures with features that are particularly sensitive to heterostructure confinement, which has piqued interest. For example, by using an external magnetic field, the electronic states of the carriers confined in the quantum dot (QD) may be significantly altered [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. This important topic has been well researched.…”

Section: Introductionmentioning

confidence: 99%

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The Gaussian impurity effect on the electronic and magnetic properties of an electron confined in a lateral quantum dot

Shaer¹,

Elsaid²

2022

Nanosystems: Phys. Chem. Math.

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The Hamiltonian of a single electron trapped in a lateral quantum dot in the influence of an acceptor Gaussian impurity has been solved using a variational wavefunction as a superposition of a product of eigenfunctions of the harmonic oscillator in x and y coordinates. The effects of Gaussian impurity parameters on the system's spectra have been investigated as a function of the magnetic field. Furthermore, the electron probability has been displayed to investigate the impurity position effect on the energy levels. As a second step, the calculated energy spectra were utilized to compute and visualize the system's magnetic properties in the presence of the magnetic field and impurity. The obtained energy spectra show level crossings in the presence of acceptor impurity, which causes oscillations in the magnetic susceptibility and magnetization curves, resulting in an exciting diamagnetic-paramagnetic phase transition. KEYWORDS lateral quantum dot, magnetic properties, Gaussian impurity, diamagnetic-paramagnetic transition FOR CITATION Shaer A., Elsaid M.K. The Gaussian impurity effect on the electronic and magnetic properties of an electron confined in a lateral quantum dot.

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Section: Introductionmentioning

confidence: 99%

“…Various theoretical studies have been devoted to solving the Schrodinger equation for the QD system using various approaches such as the variational [13,17,18], the 1/N expansion [11,12], and the exact diagonalization method [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

The Gaussian impurity effect on the electronic and magnetic properties of an electron confined in a lateral quantum dot

Shaer¹,

Elsaid²

2022

Nanosystems: Phys. Chem. Math.

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“…If we consider that the donor impurity is not ionized, the dipole is the first term in this expansion since there is no Coulomb (monopolar) contribution in this case. Our choice here adds a new case to that of the usual Coulomb impurities [5,7,23,24,25,26,27,28].…”

Section: Introductionmentioning

confidence: 99%

Exact Solutions for a Quantum Ring with a Dipolar Impurity

Baazouzi,

Moumni,

Falek

2020

Preprint

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We study analytically the Schrödinger equation for a system made up of a quantum ring with a dipolar impurity under the effect an Aharonov-Bohm field and we choose the pseudoharmonic oscillator as a confinement potential. We calculate the exact values of the energies and we also get the exact expressions of the wave functions. We study the effects of the dipole moment of the impurity on the energies of the levels as well as on those of the transitions and this for different materials.

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Analyzing Normalized Binding Energy of GaAs Quantum Dot Containing Gaussian Impurity: Role of Noise

Bhakti,

Ghosh

2024

Physica Status Solidi (b)

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In the present study, the impurity binding energy (IBE) and the normalized IBE (NIBE) of GaAs quantum dot (QD) are meticulously scrutinized. The QD contains Gaussian impurity as dopant. Gaussian white noise, applied via two different routes (additive and multiplicative), also becomes part of the QD confinement potential. The IBE and NIBE exhibit (depending on presence/absence of noise, mode of entrance of noise and the given physical parameter undergoing change) steady growth, steady fall, and maximization. Over the whole study, the NIBE plots efficiently manifest some intricate features which IBE plots fail to do and establish their greater efficacy over the IBE plots in unveiling the influences of various physical parameters. The findings of the study appear to be quite pertinent in realizing the optical properties of low‐dimensional nanostructures containing impurity and under the aegis of noise.

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The magnetic properties of GaAs parabolic quantum dot in the presence of donor impurity, magnetic and electric fields

Cited by 16 publications

References 42 publications

The Gaussian impurity effect on the electronic and magnetic properties of an electron confined in a lateral quantum dot

The Gaussian impurity effect on the electronic and magnetic properties of an electron confined in a lateral quantum dot

Exact Solutions for a Quantum Ring with a Dipolar Impurity

Analyzing Normalized Binding Energy of GaAs Quantum Dot Containing Gaussian Impurity: Role of Noise

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