The mask error factor in optical lithography

Wong, Alfred K. K.; Ferguson, Richard A.; Mansfield, Scott

doi:10.1109/66.843639

Cited by 31 publications

(14 citation statements)

References 54 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Systematic variations can be classified as across field (dependent on position in reticle) systematic and layout dependent systematic variations. Across field systematic variations are caused by photolithographic and etching sources such as dose, focus, and exposure variations [12], lens aberrations [13], mask errors [14], and variations in etch loading [15]. These variations exhibit strong spatial correlation.…”

Section: Systematic Vs Random Variationmentioning

confidence: 98%

Characterization and design for variability and reliability

Nowka

Nassif

Agarwal

2008

2008 IEEE Custom Integrated Circuits Conference

View full text Add to dashboard Cite

show abstract

Section: Systematic Vs Random Variationmentioning

confidence: 98%

Characterization and design for variability and reliability

Nowka

Nassif

Agarwal

2008

2008 IEEE Custom Integrated Circuits Conference

View full text Add to dashboard Cite

show abstract

“…This process should effectively remove all components of systematic variation except for the across-field component. If mask measurements are available, the mask errors ( Figure 3) can be multiplied by the approximated 12 mask error factor (MEF) [13][14][15] and subtracted from the average field data ( Figure 4). This effectively removes the mask errors from consideration.…”

Section: Characterization Of CD Variationmentioning

confidence: 99%

Optimum sampling for characterization of systematic variation in photolithography

2002

View full text Add to dashboard Cite

In this paper, variability in the photolithography pattern transfer process is analyzed by means of a large number of CD measurements spread across the stepper field and across the wafer. The variability is found to be highly systematic in nature, and methods are developed to extract the parameters of this systematic variation. Knowledge of the structure of the systematic variance allows for the selection of an optimum sampling plan to best capture the variance in future measurements of wafers from the same process.

show abstract

“…Several theoretical and experimental approaches have been reported to study the effects of mask error factor as well as its relation with processing conditions [1][2][3][4][5][6]. Although this knowledge is helpful in understanding MEF and its implications in process control, a compact formulation can offer several advantages.…”

Section: Introductionmentioning

confidence: 97%