The measurement of the temperature inside the hot phonon spot induced by laser excitation of silicon

Bonch-Osmolovskiǐ, M. M.; Galkina, T. I.; Klokov, A. Yu.; Plotnikov, A. F.; Pokrovskii, Yu.Yu.; Sharkov, A. V.

doi:10.1016/0038-1098(94)90876-1

Cited by 4 publications

(1 citation statement)

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“…Estimation of the FTA and STA scattering parameters turns out to be more sophisticated, see, [3] for details. We tried to carry out the Monte Carlo simulation [10], when the variable parameter is the value of A LIFE (LA). Best fit is for the value A LIFE (LA) = 7×10 -54 s -1 Hz -5 , (see Fig.…”

Section: Acoustic Phonon Scattering In Ii-vi Compounds Influence Of mentioning

confidence: 99%

Scattering of acoustic phonons by embedded layers, extended defects and interfaces in diamond, silicon and II‐VI compounds

Sharkov

Galkina

Klokov

2004

phys. stat. sol. (c)

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The propagation of acoustic phonons in IV and II-VI group materials with various types of interfaces embedded inside the samples was investigated. A reverberation-type phenomenon is observed in diamond samples with implanted layers. Measurements of phonon scattering in ZnTe and CdTe with different impurity concentrations, dislocation density, and twinning systems have shown that in a pure large-grain ZnTe with chaotically placed twinning systems separated by 1-10 µm, the scattering by twins dominated. The phonon free path in such samples is reduced compared to the twin-free (though more doped) material by more than an order of magnitude. Si/SiGe double quantum wells demonstrated a perfect quality of interfaces when probed by phonons from the substrate side.

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Section: Acoustic Phonon Scattering In Ii-vi Compounds Influence Of mentioning

confidence: 99%